An accurate model of a vertical pillar quantum dot is described. The full three dimensional structure of the device containing the dot is taken into account and this leads to an effective two dimensional model in which electrons move in the two lateral dimensions, the confinement is parabolic and the interaction potential is very different from the bare Coulomb potential. The potentials are found from the device structure and a few adjustable parameters. Numerically stable calculation procedures for the interaction potential are detailed and procedures for deriving parameter values from experimental addition energy and chemical potential data are described. The model is able to explain magnetic field dependent addition energy and chemical potential data for an individual dot to an accuracy of about 5%, the accuracy level needed to determine ground state quantum numbers from experimental transport data. Applications to excited state transport data are also described.
We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene)(P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to $10^6$ A/m$^2$). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.
We report the efficient coherent photon scattering from a semiconductor quantum dot embedded in a pillar microcavity. We show that a surface acoustic wave can periodically modulate the energy levels of the quantum dot, but has a negligible effect on the cavity mode. The scattered narrow-band laser is converted to a pulsed single-photon stream, displaying an anti-bunching dip characteristic of single-photon emission. Multiple phonon sidebands are resolved in the emission spectrum, due to the absorption and emission of vibrational quanta in each scattering event.
The semiconductor quantum dot nanopillar array in InAs/GaAs was fabricated. In consideration of the quantum dot density, the pillar diameter was determined as only a few quantum dots were involved in a pillar. The lattice constant of a pillar array was optimized such that only one pillar couples to the fiber core without any specific manipulation. Such structural consideration regarding the photon source and the optical setup contributes to the high purity of the single-photon generation. For high extraction efficiency of photons from photon source, we fabricated the metal cavity structure aro…
Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and an atomistic model based on the Keating potential. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduct…
We investigate room temperature lasing of terahertz quantum cascade lasers using quantum dot chains as active material suitable for wireless communication and imaging technologies. Bandstructure calculations for such extended systems of coupled quantum dots are made possible by a novel 'linear combination of quantum dot orbitals'--method, based on single quantum dot wavefunctions. Our results demonstrate strong vertical-emission of coupled quantum dots, reduced phonon coupling and in-plane scattering, enabling room-temperature lasing with significantly reduced threshold current densities.
We investigate the emission directionality of electronic intraband (intersubband) transitions in stacked coupled quantum dots. Using a well-established eight-band $k \cdot p$ method, we demonstrate that the minor contributions from the valence band mixing into the conduction band govern the polarization and emission directionality of electronic $p$-to-$s$-type intraband transitions. Despite that the contribution from the central-cell part to the momentum matrix element is dominant, we find, the contribution from the matrix elements among the envelope functions cannot be neglected. With the hel…
A theoretical investigation has been made of the magnetoplasmon excitations in a quasi-one-dimensional electron system comprised of vertically stacked, self-assembled InAs/GaAs quantum dots. The smaller length scales involved in the experiments impel us to consider a perfectly periodic system of two-dimensionally confined InAs quantum dot layers separated by GaAs spacers. Subsequent system is subjected to a two-dimensional confining (harmonic) potential in the x-y plane and an applied magnetic field (B) in the symmetric gauge. This scheme defines virtually a system of quantum wire comprised of…
Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane an…
We propose a two-qubit optically controlled phase gate in quantum dot molecules via adiabatic passage and hole tunneling. Our proposal combines the merits of the current generation of vertically stacked self-assembled InAs quantum dots and adiabatic passage. The simulation shows an implementation of the gate with a fidelity exceeding 0.98.
We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over the field range we can access. We conclude that this linear tuning is a general feature of self-assembled quantum dots, observed under different growth conditions, emission wavelengths and in different material systems. Statistical measurements of characteristic parameters such as emission energy, Stark shift and FSS tuning are presented which may provide a g…
The excitonic fine structure plays a key role for the quantum light generated by semiconductor quantum dots, both for entangled photon pairs and single photons. Controlling the excitonic fine structure has been demonstrated using electric, magnetic, or strain fields, but not for quantum dots in optical cavities, a key requirement to obtain high source efficiency and near-unity photon indistinguishability. Here, we demonstrate the control of the fine structure splitting for quantum dots embedded in micropillar cavities. We propose a scheme based on remote electrical contacts connected to the pi…
The implementation and engineering of bright and coherent solid state quantum light sources is key for the realization of both on chip and remote quantum networks. Despite tremendous efforts for more than 15 years, the combination of these two key prerequisites in a single, potentially scalable device is a major challenge. Here, we report on the observation of bright and coherent single photon emission generated via pulsed, resonance fluorescence conditions from a single quantum dot (QD) deterministically centered in a micropillar cavity device via cryogenic optical lithography. The brightness…
Quantum dots (QDs) are semiconductor nanostructures in which a three dimensional potential trap produces an electronic quantum confinement, thus mimicking the behaviour of single atomic dipole-like transitions. However unlike atoms, QDs can be incorporated into solid state photonic devices such as cavities or waveguides that enhance the light-matter interaction. A near unit efficiency light-matter interaction is essential for deterministic, scalable quantum information (QI) devices. In this limit, a single photon input into the device will undergo a large rotation of the polarization of the li…
