用时间分辨和能量分辨光致发光谱方法研究了六方氮化硼的近带隙发光（hnu > 5eV）。在5.5 eV和5.3 eV处观察到两个发射。在5.5 eV处的高能发射由分配给在5.47 eV、5.56 eV和5.61 eV处的束缚激子的固定子带组成。在5.3 eV处的非结构化低能量发射经历大的蓝移（高达120 meV），线性斜率为<1 with increasing excitation energy Eexc. At Eexc>5.7 eV，带位置是固定的并且标记从拉曼到光致发光制度的转变。我们分配的5.3 eV带准施主-受主对（q-DAP）状态由于带电缺陷引起的静电带波动。这种位移是由带电缺陷态的光致中和来解释的。激子对q-DAP发光没有贡献表明存在大的激子结合能，这与理论预测定性一致。
英文摘要：
Near band-gap luminescence (hnu > 5 eV) of hexagonal boron nitride has been studied by means of the time- and energy-resolved photoluminescence spectroscopy method. Two emissions have been observed at 5.5 eV and 5.3 eV. The high-energy emission at 5.5 eV is composed of fixed sub-bands assigned to bound excitons at 5.47 eV, 5.56 eV and 5.61 eV. The non-structured low-energy emission at 5.3 eV undergoes a large blue shift (up to 120 meV) with a linear slope <1 with increasing excitation energy Eexc. At Eexc>5.7 eV, the band position is fixed and marks the transition from the Raman to the photoluminescence regime. We assign the 5.3 eV band to quasi donor-acceptor pair (q-DAP) states due to electrostatic band fluctuations induced by charged defects. The shift is explained by photo-induced neutralization of charged defect states. The absence of contribution to the q-DAP luminescence from exciton suggests the existence of a large exciton binding energy, which is qualitatively consistent with theoretical predictions.
