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arXiv 0804.1992cond-mat.mtrl-sci
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微机电系统用5 $μ$ m厚SmCo薄膜的结构、磁性和机械性能

Structural, magnetic and mechanical properties of 5 $μ$m thick SmCo films for use in Micro-Electro-Mechanical-Systems

Arnaud Walther, Kirill Khlopkov, Oliver Gutfleisch, Dominique Givord, N. M. Dempsey

摘要:

采用磁控溅射法在Si衬底上沉积了5 $μ$ m厚的SmCo薄膜。对沉积温度(Tdep <= 600 ℃)对结构、磁性和机械性能的影响的研究表明,对于在350 ℃的相对低的温度下沉积的膜,实现了最佳性能(最高程度的面内织构、最大面内矫顽力和剩磁(分别为1.3和0.8 T)、无膜剥离)。该温度与微机电系统(MEMS)中的膜集成兼容。通过将靶的表面积从7增加到81 cm 2,沉积速率从3.6增加到18 $μ$ m/h。机械稳定的膜可以通过沉积到预图案化的膜上或通过掩模中的孔沉积来制备。

英文摘要:

5$μ$m thick SmCo films were deposited onto Si substrates using triode sputtering. A study of the influence of deposition temperature (Tdep <= 600 degrees C) on the structural, magnetic and mechanical properties has shown that optimum properties (highest degree of in-plane texture, maximum in-plane coercivity and remanence (1.3 and 0.8 T, respectively), no film peel-off) are achieved for films deposited at the relatively low temperature of 350 degrees C. This temperature is compatible with film integration into Micro-Electro-Mechanical-Systems (MEMS). The deposition rate was increased from 3.6 to 18 $μ$m/h by increasing the surface area of the target from 7 to 81 cm2. Mechanically stable films could be prepared by deposition onto pre-patterned films or deposition through holes in a mask.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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