低维半导体的电子性质和相变
Electronic properties and phase transitions in low-dimensional semiconductors
摘要：
本文首次综述了TlX和TlMX_2（M = Ga，In; X = Se，S，Te）化合物的电子性质和相变的研究现状。这些硫族化合物属于具有链状或层状结构的低维半导体家族。由于其高度的各向异性特性、半导性和光电导性、I-V特性中的非线性效应（包括负微分电阻区域）、开关和记忆效应、二次谐波光产生、弛豫行为以及在光电子器件中的潜在应用，它们引起了人们的极大兴趣。本文综述了TlX和TlMX_2化合物的晶体结构、在环境条件下的输运性质、高压下电子结构、输运性质和超导体-金属相变的实验和理论研究，以及温度诱导的具有中间无公度态的结构相变序列。讨论了上述化合物中铁电相变的电子性质，以及掺杂和辐照晶体中的弛豫行为、纳米畴和可能出现的量子点。
英文摘要：
We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional semiconductors possessing chain or layered structure. They are of significant interest because of their highly anisotropic properties, semi- and photoconductivity, non-linear effects in their I-V characteristics (including a region of negative differential resistance), switching and memory effects, second harmonic optical generation, relaxor behavior and potential applications for optoelectronic devices. We review the crystal structure of TlX and TlMX2 compounds, their transport properties under ambient conditions, experimental and theoretical studies of the electronic structure, transport properties and semiconductor-metal phase transitions under high pressure, and sequences of temperature-induced structural phase transitions with intermediate incommensurate states. Electronic nature of the ferroelectric phase transitions in the above-mentioned compounds, as well as relaxor behavior, nanodomains and possible occurrence of quantum dots in doped and irradiated crystals is discussed.
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