Power dissipation in switching devices is believed to be the single most important roadblock to the continued down scaling of electronic circuits. There is a lot of experimental effort at this time to implement switching circuits based on magnets and it is important to establish power requirements for such circuits and their dependence on various parameters. This paper analyzes switching energy which is dissipated in the switching process of single domain Ferromagnets used as cascadable logic bits. We obtain generic results that can be used for comparison with alternative technologies or guide the design of magnet based switching circuits. Two central results are established. One is that the switching energy drops significantly if the ramp time of an external pulse exceeds a critical time. This drop occurs more rapidly than what is normally expected of adiabatic switching for a capacitor. The other result is that under the switching scheme that allows for logic operations, the switching energy can be described by a single equation in both fast and slow limits. Furthermore, these generic results are used to quantitatively examine the possible operation frequencies and integration densities of these logic bits which show that nanomagnets can have scaling laws similar to CMOS technology.
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly from the Rashba or spin Hall effects, we suggest that this type of switching arises from the current-induced chirality dependent domain wall motion. By measuring the field dependent switching behaviors, we show that such switching can also be achieved between any two multidomain states, and all of these switching behaviors can be well explained by this model. …
The controlled switching between two quasi-stable Neel states in adsorbed anti-ferromagnetic Fe chains has recently been achieved by Loth et al [Science 335, 196 (2012)]. In order to rationalize their data, we evaluate the rate of tunneling electron-induced switching between the Néel states. Good agreement is found with the experiment permitting us to identify three switching mechanisms: (i) low-bias direct electron-induced transitions, (ii) intermediate-bias switching via spin-wave-like excitation, and (iii) high-bias transitions mediated by domain wall formation. Spin correlations in the ant…
The field dependence of the thermal switching rate of a ferromagnetic material with uniaxial anisotropy was studied by solving the Fokker-Planck equation. We derived the analytical expression of the thermal switching rate using the mean first-passage time approach, and found that Brown's formula [Phys. Rev. 130, 1677 (1963)] is applicable even in the low barrier limit by replacing the attempt frequency with the proper factor which is expressed by the error function.
As an alternative to conventional magnetic field, the effective spin-orbit field in transition metals, derived from the Rashba field experienced by itinerant electrons confined in a spatial inversion asymmetric plane through the s-d exchange interaction, is proposed for the manipulation of magnetization. Magnetization switching in ferromagnetic thin films with perpendicular magnetocrystalline anisotropy can be achieved by current induced spin-orbit field, with small in-plane applied magnetic field. Spin-orbit field induced by current pulses as short as 10 ps can initiate ultrafast magnetizatio…
In a number of recent experiments, it has been shown that femtosecond laser pulses can control magnetization on picosecond timescales, which is at least an order of magnitude faster compared to conventional magnetization dynamics. Among these demonstrations, one material system (GdFeCo ferromagnetic films) is particularly interesting, as deterministic toggle-switching of the magnetic order has been achieved without the need of any symmetry breaking magnetic field. This phenomenon is often referred to as all optical switching (AOS). However, so far, GdFeCo remains the only material system where…
We show that Co spins in Co/FeRh epitaxial bilayers grown on W(110) switch reversibly between the two orthogonal in-plane directions as the FeRh layer undergoes temperature driven antiferromagnetic-ferromagnetic (AFM-FM) phase transition. Switching of Co magnetization is characterized by a hysteretic behavior owing to a temperature hysteresis of the AFM-FM transition in FeRh. The spin reorientation of Co is driven by the evolution interfacial exchange coupling to FeRh system across the AFM-FM process. Our results provide a new method of writing information purely by a local temperature change.
Vortex core polarity switching in NiFe disks has been evidenced using an all-electrical rectification scheme. Both simulation and experiments yield a consistent loss of the rectified signal when driving the core at high powers near its gyrotropic resonant frequency. The frequency range over which the loss occurs grows and shifts with increasing signal power, consistent with non-linear core dynamics and periodic switching of the core polarity induced by the core attaining its critical velocity. We demonstrate that core polarity switching can be impeded by displacing the core towards the disk's …
Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves passing a high current across an ultrathin tunnel barrier. A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impractical to generate the field externally for spintronic applications. Here, we demonstrate robust zero-field SOT switching of a perpendicular Co90Fe10 (CoFe) free layer where the symmetry is broken by mag…
Dynamics of magnetic vortex core switching in nanometer-scale permalloy disk, having a single vortex ground state, was investigated by micromagnetic modeling. When an in-plane magnetic field pulse with an appropriate strength and duration is applied to the vortex structure, additional two vortices, i.e., a circular- and an anti-vortex, are created near the original vortex core. Sequentially, the vortex-antivortex pair annihilates. A spin wave is created at the annihilation point and propagated through the entire element; the relaxed state for the system is the single vortex state with a switch…
Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm junctions produced using a nanostencil process a bistable state with two distinct resistance values is observed. Current sweeps at fixed applied fields reveal hysteretic and abrupt transitions between these two resistance states. The current induced resistance change is 0.5%, a factor of 5 greater than the anisotropic magnetoresistance (AMR) effect. We present an…
We develop a theory of the reversible switching of the magnetic state of the ferromagnet-insulator-normal metalferromagnet (FINF) nanostructure. The switching is controlled by tuning the Coulomb blockade strength via the gate voltage on the normal metal granule. The proposed mechanism allows for realizing the switching without passing a dissipative current through the structure.
All-optical magnetic switching promises ultrafast, high-resolution magnetisation control with the technological attraction of requiring no magnetic field. Existing all-optical switching schemes are driven by ultrafast transient effects, typically requiring power-hungry femtosecond-pulsed lasers and complex magnetic materials. Here, we demonstrate deterministic, all-optical magnetic switching in simple ferromagnetic nanomagnets (Ni$_{81}$Fe$_{19}$, Ni$_{50}$Fe$_{50}$) with sub-diffraction limit dimensions using a focused low-power, linearly-polarised continuous-wave laser. Isolated nanomagnets …
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and confirmed by the experiments. In this work, we theoretically and numerically investigate the switching current required for perpendicular magnetization switching in ferromagnetic trilayers. We confirm that the tilted spin polarization enables field-free deterministic switching at a lower current than conventional spin-orbit torque or spin-transfer torque sw…
We study the switching-process of the magnetization in a ferromagnetic-normal-metal multilayer system by a spin polarized electrical current via the spin transfer torque. We use a spin drift-diffusion equation (SDDE) and the Landau-Lifshitz-Gilbert equation (LLGE) to capture the coupled dynamics of the spin density and the magnetization dynamic of the heterostructure. Deriving a fully analytic solution of the stationary SDDE we obtain an accurate, robust, and fast self-consistent model for the spin-distribution and spin transfer torque inside general ferromagnetic/normal metal heterostructures…
We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25\% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find {\it two} sharp trans…
Recent studies on magnetization dynamics induced by spin-orbit torque have revealed a weak dependence of the critical current for magnetization switching on the damping constant of a ferromagnetic free layer. This study, however, reveals that the damping constant nevertheless plays a key role in magnetization switching induced by spin-orbit torque. An undesirable switching, returning to an initial state, named as back switching, occurs in a ferromagnet with an easy axis parallel to the current direction. Numerical and theoretical analyses reveal that back switching is strongly suppressed when …
We simulate the switching behavior of nanoscale synthetic antiferromagnets (SAFs), inspired by recent experimental progress in spin-orbit-torque switching of crystal antiferromagnets. The SAF consists of two ferromagnetic thin films with in-plane biaxial anisotropy and interlayer exchange coupling. Staggered field-like Rashba spin-orbit torques from the opposite surfaces of the SAF induce a canted net magnetization, which triggers an orthogonal torque that drives 90$^\circ$ switching of the Néel vector. Such dynamics driven by the field-like spin-orbit torque allows for faster switching with i…
Influence of Ferromagnetic Interlayer Exchange Coupling on Current-induced Magnetization Switching and Dzyaloshinskii-Moriya Interaction in Co/Pt/Co Multilayer System
Gate-induced magnetic switching in bilayer CrI$_3$ has opened new ways for the design of novel low-power magnetic memories based on van der Waals heterostructures. The proposed switching mechanism seems to be fully dominated by electrostatic doping. Here we explain, by first-principle calculations, the ferromagnetic transition in doped bilayer CrI$_3$. For the case of a very small electron doping, our calculations predict the formation of magnetic polarons ("ferrons", "fluctuons") where the electron is self-locked in a ferromagnetic droplet in an antiferromagnetic insulating matrix. The self-t…
We represent the results of micromagnetic modeling and experimental magnetic force microscopy investigations of domain wall (DW) pinning-depinning effects in the hybrid systems consisting of ferromagnetic nanowire (NW) and two ferromagnetic nanoparticles (NPs). It was demonstrated that the special NW-NPs configuration including the NW with DW nucleating bulb at one end and two-NP gate enables the realization of controlled DW pinning-depinning based on switching of magnetization in NPs subsystem. The algorithm of external driving field manipulation and independent NPs switching, which allow one…
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium exchange interaction between the ferromagnetic layers. This interaction defines the magnetic configuration of the layers with minimum energy and establishes the threshold for a critical switching current. Depending on the direction of the critical current, the interaction changes sign and a given magnetic configuration becomes unstable. To model the time depen…
We study the band structure and transport properties of ferromagnetic tetragonal silicene nanoribbons by using the non-equilibrium Green's function method. The band structure and spin-dependent conductance are discussed under the combined effect of the external electric field, potential energy, exchange field and the spin-orbit coupling. One can easily realize a phase transition from a semimetallic to a semiconducting state by changing the transverse width of the nanoribbon. Separation of spin-dependent conductances arises from the effect of exchange field and the spin-orbit coupling, while ze…
We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on the top surface of Fe. When current is passed on the surface of Bi2Se3, the surface of the Bi2Se3 becomes spin polarized and strong exchange interaction occurs between the d electrons in the ferromagnet and the electrons conducting the current on the surface of the Bi2Se3. Part of the current is shunted through the ferromagnet which generates spin transfer torque in the ferromagnet.…
We discuss the effects of thermal noise on the magnetic response of a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The direction of the magnetic moment in the ferromagnetic layer can be inverted by using controlled current pulses. This phenomenon is due to the magnetoelectric effect that couples the flowing charge current and the magnetization of the ferromagnet. We investigate the magnetization reversal effect versus intrinsic parameters of the ferromagnet, such as the Gilbert damping and strength of the spin-orbit coupling. We estimate the…
We present a theoretical study of the the effects of off-resonant polarized optical fields on a ferromagnetic model system. We determine the light-induced dynamics of itinerant carriers in a system that includes magnetism at the mean-field level and spin-orbit coupling. We investigate an all-optical switching process for ferromagnets, which is close to the one proposed by Qaiumzadeh et al. [Phys. Rev. B 88, 064416] for the inverse Faraday effect. By computing the optically driven coherent dynamics together with incoherent scattering mechanisms we go beyond a perturbation expansion in powers of…
All optical magnetic switching (AOS) is a recently observed rich and puzzling phenomenon that offers promis- ing technological applications. However, fundamental understanding of the underlying mechanisms remains elusive. Here we present a new model for multi-shot helicity-dependent AOS in ferromagnetic materials based on a purely heat-driven mechanism in the presence of Magnetic Circular Dichroism (MCD). We predict that AOS should be possible with as little as 0.5% of MCD, after a minimum number of laser shots. Finally, we re- produce previous AOS results by simulating the sweeping of a laser…
We study permalloy nanorings that are lithographically fabricated with narrow gaps that break the rotational symmetry of the ring while retaining the vortex ground state, using both micromagnetic simulations and magnetic force microscopy (MFM). The vortex chirality in these structures can be readily set with an in-plane magnetic field and easily probed by MFM due to the field associated with the gap, suggesting such rings for possible applications in storage technologies. We find that the gapped ring edge characteristics (i.e., edge profile and gap shape) are critical in determining the magnet…
Molecular spintronics is made possible by the coupling between electronic configuration and magnetic po- larization of the molecules. For control and application of the individual molecular states it is necessary to both read and write their spin states. Conventionally, this is achieved by means of external magnetic fields or ferromagnetic contacts, which may change the intentional spin state and may present additional challenges when downsizing devices. Here, we predict that coupling magnetic molecules together opens up possibilities for all electrical control of both the molecular spin state…
We theoretically studied the thermally assisted spin torque switching of a synthetic free layer and showed that the switching time is minimized if the condition H_J=|H_s|/(2 alpha) is satisfied, where H_J, H_s and alpha are the coupling field of two ferromagnetic layers, the amplitude of the spin torque, and the Gilbert damping constant. We also showed that the coupling field of the synthetic free layer can be determined from the resonance frequencies of the spin-torque diode effect.
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires an externally-applied in-plane field to break the switching symmetry. We show that by inserting an in-plane magnetized ferromagnetic layer CoFeB underneath the conventional W/CoFeB/MgO SOT heterostructure, deterministic SOT switching of the perpendicularly-magnetized top CoFeB layer can be realized without the need of in-plane bias field. Kerr imaging study…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Ra…
We develop a macroscopic description of the current-induced torque due to spin transfer in a layered system consisting of two ferromagnetic layers separated by a nonmagnetic layer. The description is based on i) the classical spin diffusion equations for the distribution functions used in the theory of CPP-GMR, ii) the relevant boundary conditions for the longitudinal and transverse components of the spin current in the situation of quasi-interfacial absorption of the transverse components in a magnetic layer. The torque is expressed as a function of the usual parameters derived from CPP-GMR e…
Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane picosecond-range magnetic field pulses. Our detailed micromagnetic simulations, supported by analytical results, yield the parameter space where inertial switching and relaxation-free switching can be achieved in the system. We furthermore discuss the advantages of dynamic switching in synthetic antiferromagnets and, specifically, their relatively low-power switching as co…
We study the influence of the spin torque, which depends on the space and time derivative of magnetization, on magnetization reversal time in a ferromagnetic fine particle. The spin torque operates to dissipate the angular momentum of the magnetization precession, and the torque increases in a spin vortex structure. We calculate the magnetization reversal time under a DC magnetic field using the Landau-Lifshitz-Gilbert equation containing a spin torque term. We found that the spin torque changes the magnetization switching speed significantly during the reversal process by maintaining a spin v…
We propose a theoretical model of magnetization switching in a ferromagnetic multilayer by both electric current and microwaves. The electric current gives a spin transfer torque on the magnetization, while the microwaves induce a precession of the magnetization around the initial state. Based on numerical simulation of the Landau-Lifshitz-Gilbert (LLG) equation, it is found that the switching current is significantly reduced compared with the switching caused solely by the spin transfer torque when the microwave frequency is in a certain range. We develop a theory of switching from the LLG eq…
In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating thereof for low-energy switching of nanomagnets for possible memory and nonvolatile logic applications. For specificity, we consider nanomagnets with perpendicular anisotropy on a three-dimensional topological insulator. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Applications for both memory and nonvolatile logic are consi…
We investigate the magnetic response of a superconducting Nb ring containing a ferromagnetic PdNi Josephson junction and a tunnel junction in parallel. A doubling of the switching frequency is observed within certain intervals of the external magnetic field. Assuming sinusoidal current-phase relations of both junctions our model of a dc-SQUID embedded within a superconducting ring explains this feature by a sequence of current reversals in the ferromagnetic section of the junction in these field intervals. The switching anomalies are induced by the coupling between the magnetic fluxes in the t…
Electron switching in waveguides coupled to a photon cavity is found to be strongly influenced by the photon energy and polarization. Therefore, the charge dynamics in the system is investigated in two different regimes, for off- and on-resonant photon fields. In the off-resonant photon field, the photon energy is smaller than the energy spacing between the first two lowest subbands of the waveguide system, the charge splits between the waveguides implementing a $\sqrt{\rm NOT}$-quantum logic gate action. In the on-resonant photon field, the charge is totally switched from one waveguide to the…
Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe$_3$GaTe$_2$
Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state, resulting in "non-toggle" switching. T…
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90 in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demon…
Superconducting qubits connected in an array can form quantum many-body systems such as the quantum Ising model. By coupling the qubits to a superconducting resonator, the combined system forms a circuit QED system. Here, we study the nonlinear behavior in the many-body state of the qubit array using a semiclassical approach. We show that sudden switchings as well as a bistable regime between the ferromagnetic phase and the paramagnetic phase can be observed in the qubit array. A superconducting circuit to implement this system is presented with realistic parameters .
Rutile CrO2 is the most important half-metallic material with nearly 100% spin polarization at the Fermi level, and rutile TiO2 is a wide-gap semiconductor with many applications. Here we show through first-principles investigation that a single-unit-cell CrO2 layer on rutile TiO2 (001) surface is ferromagnetic and semiconductive with a gap of 0.54 eV, and its electronic state transits abruptly to a typical metallic state when an electrical field is applied. Consequently, this makes an interesting electrical switching effect which may be useful in designing spintronic devices.
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF conductance remains fairly large (~ 60) up to a temperature of 10 K. This device also has excellent inverter characteristics, making it attractive for applications in low power and high density Boolean …
We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of resonant surface acoustic waves (r-SAW) and spin-transfer-torque (STT). The magnetization dynamics were simulated using the Landau-Lifshitz-Gilbert equation under macrospin assumption with the inclusion of thermal noise. The resonant magnetization dynamics in the magnetostrictive nanomagnet build over few 10s of cycles of SAW application that drives the magnetizat…
