We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion. Moreover, C60 provides accessible energy levels to prompt resonant tunneling through SiO2 at high fields. However, this process is quenched at low fields due to HOMO-LUMO gap and large charging energy of C60. Furthermore, we demonstrate an improvement of more than an order of magnitude in retention to program/erase time ratio for a metal nanocrystal memory. This shows promise of engineering tunnel dielectrics by integrating molecules in the future hybrid molecular-silicon electronics.
The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolatile control of magnetic anisotropy in ferromagnetic/ferroelectric CoPt/ZnO interface. Using the switched electric polarization of ZnO, the density-of-states and magnetic anisotropy at the CoPt surface show a large change. Due to a strong Co/Pt orbitals hybridization and a large spin-orbit coupling, a large control of magnetic anisotropy was found. We experimentally measured the change of effective anisotropy by tunne…
Coherent macroscopic tunneling of a Bose-Einstein condensate between two parts of an optical lattice separated by an energy barrier is theoretically investigated. We show that by a pulsewise change of the barrier height, it is possible to switch between tunneling regime and a self-trapped state of the condensate. This property of the system is explained by effectively reducing the dynamics to the nonlinear problem of a particle moving in a double square well potential. The analysis is made for both attractive and repulsive interatomic forces, and it highlights the experimental relevance of our…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving as a single-electron trap. To verify our design, we have performed a theoretical analysis of this "memristive" device, based on a combination of ab-initio calculations of the electronic structures of the molecules and the general theory of single-electron tunneling in systems with discrete energy spectra. Our results show that such molecular assemblies, with…
Programmable, Spontaneous Superlattice Memory in a Monolayer Topological Insulator
Boston College（波士顿学院）；Emory University（埃默里大学）；University of Tennessee, Knoxville（田纳西大学诺克斯维尔分校）；Max Planck Institute for Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）；Columbia University（哥伦比亚大学）；University of California Los Angeles（加州大学洛杉矶分校）；Harvard University（哈佛大学）
Interface-engineered voltage-driven magnetic tunnel junctions with ultra-low-energy magnetization switching
University of Arizona（亚利桑那大学）；University of Minnesota（明尼苏达大学）；National Institute of Standards and Technology（美国国家标准与技术研究院）；Korea Research Institute of Chemical Technology（韩国化学技术研究所）
We have engineered the bandgap profile of transmon qubits by combining oxygen-doped Al for tunnel junction electrodes and clean Al as quasiparticle traps to investigate energy relaxation due to quasiparticle tunneling. The relaxation time $T_1$ of the qubits is shown to be insensitive to this bandgap engineering. Operating at relatively low $E_J/E_C$ makes the transmon transition frequency distinctly dependent on the charge parity, allowing us to detect the quasiparticles tunneling across the qubit junction. Quasiparticle kinetics have been studied by monitoring the frequency switching due to …
Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to introduce a new generation of memory devices using graphene nanotechnology. In this paper we present a new floating gate transistor (FGT) design based on multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT). In the proposed FGT a multilayer structure of graphene nanoribbon (GNR) would be used as the channel of the field effect transistor (FET) and a laye…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg). Unlike the conventional hetero-junction TFETs, TE-TFET uses spatially varying layer thickness to form a hetero-junction. This offers advantages by avoiding the interface states and lattice mismatch problems. Furthermore, it boosts the ON-current to 1280$μA/μm$ for 15nm channel length. TE-TFET shows a channel length scalability down to 9nm with constant field sca…
Two electrons in a quantum dot repel each other: their interaction can be characterized by a positive interaction energy. From the theory of superconductivity, we also know that mechanical vibrations of the crystal lattice can make the electron-electron interaction attractive. Analogously, if a quantum dot interacts with a mechanical degree of freedom, the effective interaction energy can be negative; that is, the electron-electron interaction might be attractive. In this work, we propose and theoretically study an engineered electromechanical system that exhibits electron-electron attraction:…
Recent experiments showed that non-uniform strain can be produced by depositing graphene over pillars. We employed atomistic calculations to study the non-uniform strain and the induced pseudo-magnetic field up to 5000 Tesla in graphene on top of nano-pillars. By decreasing the distance between the nano-pillars a complex distribution for the pseudo-magnetic field can be generated. Furthermore, we performed tight-binding calculations of the local density of states (LDOS) by using the relaxed graphene configuration obtained from the atomistic calculations. We find that the quasiparticle LDOS are…
Topological modes in one- and two-dimensional systems have been proposed for numerous applications utilizing their exotic electronic responses. The zero-energy, topologically protected end modes can be realized in the Su-Schrieffer-Heeger (SSH) model, which has been experimentally implemented in atomic-scale solid-state structures and in ultra-cold atomic gases. While the edge modes in the SSH model are at exactly the mid-gap energy, other paradigmatic 1D models such as trimer and coupled dimer chains have non-zero energy boundary states. However, these chains have not been realized in an atom…
Applying time-periodic modulations is routinely used to control and design synthetic matter in quantum-engineered settings. In lattice systems, this approach is explored to engineer band structures with non-trivial topological properties, but also to generate exotic interaction processes. A prime example is density-assisted tunneling, by which the hopping amplitude of a particle between neighboring sites explicitly depends on their respective occupations. Here, we show how density-assisted tunneling can be tailored in view of simulating the effects of strain in synthetic graphene-type systems.…
Spin selective nature of spin-filter tunnel junctions can be integrated with conventional metallic ferromagnets to regulate spin polarized quasiparticles in superconducting devices. We report fabrication of pseudo spin-valve device made with a bilayer of nitride spin-filter tunnel barrier (DyN or GdN) and a transition metal ferromagnet (Co and Gd). We show resistance switching in these devices corresponding to parallel and antiparallel configuration of their mutual magnetization direction. With optimal deposition process partial nitridation of the Co layer can be achieved. The magnetically dea…
Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. An exciting development is the recent success in 'engineering' crystal phases of TMD compounds during the growth due to their polymorphic character. Here, we report an electric field induced reversible engineered phase transition in vertical 2H-MoTe2 devices, a crucial experimental finding that enables electrical phase switching for these ultra-thin layered materials. Scanning tunneling microscopy (STM) was u…
Various promising qubit concepts have been put forward recently based on engineered superconductor (SC) subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a SC strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension of a Shiba state in a semiconductor quantum dot coupled to a SC for the first time. With detailed transport measurements and numerical renormalization group calculations we find a remarkable more than …
Over the past years, thermionic energy conversion (TEC) with a reduced inter-electrode vacuum gap has been studied as an effective way to mitigate a large potential barrier due to space charge accumulation. However, existing theoretical models do not fully consider the fundamental aspects of thermionic emission when the inter-electrode gap shrinks to the nanoscale, which results in underestimation of thermionic power generation for such small gaps. The present work addresses this challenge by comprehensively modeling charge and thermal transport processes with specific consideration of nanosca…
