Epitaxial self-assembled quantum dots (SAQDs) are of both technological and fundamental interest, but their reliable manufacture still presents a technical challenge. To better understand the formation, morphology and ordering of epitaxial self-assembled quantum dots (SAQDs), it is essential to have an accurate model that can aid further experiments and predict the trends in SAQD formation. SAQDs form because of the destabilizing effect of elastic mismatch strain, but most analytic models and some numerical models of SAQD formation either assume an elastically homogeneous anisotropic film-substrate system or assume an elastically heterogeneous isotropic system. In this work, we perform the full film-substrate elastic calculation. Then we incorporate the elasticity calculation into a stochastic linear growth model. We find that using homogeneous elasticity can cause errors in the elastic energy density as large as 26%, and for typical modeling parameters lead to errors of about 11% in the estimated value of average dot spacing. We also quantify the effect of elastic heterogeneity on the order estimates of SAQDs and confirm previous finding on the possibility of order enhancement by growing a film near the critical film height.
Planar array of self-assembled Ga$_{x}$Fe$_{4-x}$N nanocrystals in GaN: Magnetic anisotropy determined via ferromagnetic resonance
用铁磁共振方法研究了镶嵌在GAN基质中的$_{x}$ Fe $_{4-x}$ N纳米晶平面阵列的磁各向异性。采用X射线衍射和透射电子显微镜来确定纳米晶体的相和分布。的磁各向异性被发现主要是单轴的难磁化轴垂直于NC平面，并有一个很弱的面内六角对称。考虑到纳米晶体的形态，外延关系，应变效应和纳米之间的磁耦合的起源的磁各向异性进行了讨论。
Surface charge-transfer doping a quantum-confined silver monolayer beneath epitaxial graphene
最近，石墨烯/SiC界面已经成为一个通用的平台，否则不稳定的，单元素，二维（2D）层通过嵌入外延。它们内部覆盖了一个带有顶部石墨烯的范德华异质结构，构成了一类新的量子材料，与它们的母体大块晶体相比具有惊人的特性。嵌入银提出了一个典型的例子，其中2D量子限制和反转对称性破缺需要金属到半导体的转变。然而，很少有人知道相关的未被占领的国家，和控制费米能级的位置跨越带隙将是可取的。在这里，我们通过原位钾沉积对石墨烯/2D-Ag/SiC异质叠层进行n型掺杂，并通过基于同步加速器的角度分辨光电子能谱学探测其能带结构。虽然在$10^{14}$ cm $^{-2}$数量级上的诱导载流子密度还不足以达到银导带的起始，但是石墨烯的能带排列相对于刚性移动的Ag价带和衬底芯能级而改变。我们进一步证明了一个有序的钾吸附层（$2\times 2$相对于石墨烯）与自由电子的分散，通过增强金属化的异质叠层抑制等离子体准粒子在石墨烯。我们的研究结果建立了表面电荷转移掺杂作为一种有效的处理，以修改能带排列和电子性质的范德华异质结构组装从石墨烯和一种新型的单层量子材料。
