p-GaAs（Cs，O）在真空中的磁致自旋相关光电发射
Magnetically induced spin-dependent photoemission from p-GaAs(Cs,O) into vacuum
摘要：
在垂直于表面的磁场中，实验观察到p-GaAs（Cs，O）中光取向电子的自旋相关发射。这一现象的模型内，考虑到跳跃的电子g因子在磁控管真空界面解释。由于这种跳跃，半导体表面上的有效电子亲和势取决于光学取向的电子自旋和磁场的相互方向，导致自旋相关的光电发射。结果表明，所观察到的效应可用于确定半导体中的自旋扩散长度。
英文摘要：
A spin-dependent emission of optically oriented electrons from p-GaAs(Cs,O) into vacuum was experimentally observed in a magnetic field normal to the surface. This phenomenon is explained within the model which takes into account the jump in the electron g factor at the semiconductor-vacuum interface. Due to this jump, the effective electron affinity on the semiconductor surface depends on the mutual direction of optically oriented electron spins and the magnetic field, resulting in the spin-dependent photoemission. It is demonstrated that the observed effect can be used for the determination of spin diffusion length in semiconductors.
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