Transport through correlated quantum dots: An investigation using the functional renormalization group

Electronic Structure of Strongly Correlated Systems Emerging from Combining Path-Integral Renormalization Group with Density Functional Approach

A new scheme of first-principles computation for strongly correlated electron systems is proposed. This scheme starts from the local-density approximation (LDA) at high-energy band structure, while the low-energy effective Hamiltonian is constructed by a downfolding procedure using combinations of the constrained LDA and the GW method. Thus obtained low-energy Hamiltonian is solved by the path-integral renormalization-group method, where spatial and dynamical fluctuations are fully considered. An application to Sr$_2$VO$_4$ shows that the scheme is powerful in agreement with experimental resul…

Notes on the bunching peak of g(2) functions for correlated photons from single quantum dots

Second-order correlation functions for photon pulses associated with exciton-biexciton cascades are theoretically derived. A finite efficiency in photon detection and statistical distribution in exciton numbers are taken into account. It is found that the bunching peak height of photon statistics (g(2)(0)) depends on the mean number of excitons, N, and significant bunching is only detectable at very low excitation, N<<2.

Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were used as the main characterisation methods for the growth optimisation. Results show that photoreflectance spectroscopy is an excellent tool for characterisation of QD structures wetting layers (thickness and composition) and for identification of spacers in vertically stacked QDs structures.

关联氧化物SrVO₃金属量子阱态中异常质量重整化的起源

Origin of the anomalous mass renormalization in metallic quantum well states of correlated oxide SrVO$_3$

本文通过原位ARPES研究SrVO₃超薄膜量子阱态，发现子带质量增强异常源于轨道选择性量子化导致的V 3d态准一维特性。

Bunching visibility for correlated photons from single GaAs quantum dots

We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a model which accounts for Poissonian statistics in the number of excitons, predicting the height of a bunching peak being determined by the inverse of probability of finding more than one exciton.

Quantum Confinement of Electron-Phonon Coupling in Graphene Quantum Dots

On the basis of first-principles calculations and the special displacement method, we demonstrate the quantum confinement scaling law of the phonon-induced gap renormalization of graphene quantum dots (GQDs). We employ zigzag-edged GQDs with hydrogen passivation and embedded in hexagonal boron nitride. Our calculations for GQDs in the sub-10 nm region reveal strong quantum confinement of the zero-point renormalization ranging from 20 to 250 meV. To obtain these values we introduce a correction to the Allen-Heine theory of temperature-dependent energy levels that arises from the phonon-induced …