We calculate the spin relaxation rates in a parabolic InSb quantum dots due to the spin interaction with acoustical phonons. We considered the deformation potential mechanism as the dominant electron-phonon coupling in the Pavlov-Firsov spin-phonon Hamiltonian. By studying suitable choices of magnetic field and lateral dot size, we determine regions where the spin relaxation rates can be practically suppressed. We analyze the behavior of the spin relaxation rates as a function of an external magnetic field and mean quantum dot radius. Effects of the spin admixture due to Dresselhaus contribution to spin-orbit interaction are also discussed.
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic fields. The effective g-factor tensor extracted from the measurements is strongly anisotropic and level-dependent, which can be attributed to the presence of strong spin-orbit interaction (SOI) and asymmetric quantum confinement potentials in the QDs. We have demonstrated a successful determination of the principal values and the principal axis orientations of the…
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO$_2$ substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudi…
Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Landé g-factor, and small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological superconductivity. However, there exist limited studies of quantum confined systems in these 2DEGs, often attributed to charge instabilities and gate drifts. We overcome this by removing the $δ$-doping layer from the heterostructure, and induce carriers elect…
In this paper, we investigate the impact of gating potential and magnetic field on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit. We show that a strong $g$ factor and high magnetic field strength lead to the prevailing influence of electron-phonon scattering due to deformation potential, considered irrelevant for materials with a weak $g$ factor, like GaAs or Si/SiGe. In this regime, we find that spin relaxation between qubit states is significantly suppressed due to the confinement perpendicular to the …
We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measureme…
We propose a fast and accurate spin initialization method for a single electron trapped in an electrostatic quantum dot. The dot is created in a nanodevice composed of a catalytically grown indium antimonide (InSb) nanowire and nearby gates to which control voltages are applied. Initially we insert a single electron of arbitrary spin into the wire. Operations on spin are performed using the Rashba spin-orbit interaction induced by an electric field. First, a single pulse of voltages applied to lateral gates is used to split the electron wavepacket into two parts with opposite spin orientations…
We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded spectrum is created. To describe the observations a model is developed that combines the effects of a soft induced gap and of additional Andreev bound states both in the quantum dot and in the finite …
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate and the quantum dot confinement is achieved by top gate technique. Transport measurements show a series of Coulomb diamonds, demonstrating that the quantum dot is well defined and highly tunable. Tunable, gate…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=1$ in magnetic fields of up to $B=18$ T. We show that the electron density is gate-tunable, reproducible, and stable from pinch-off to 4$\times 10^{11}$ cm$^{-2}$, and peak mo…
We calculate the spin relaxation rates in a parabolic InSb quantum dots due to the spin interaction with acoustical phonons. We considered the deformation potential mechanism as the dominant electron-phonon coupling in the Pavlov-Firsov spin-phonon Hamiltonian. By studying suitable choices of magnetic field and lateral dot size, we determine regions where the spin relaxation rates can be practically suppressed. We analyze the behavior of the spin relaxation rates as a function of an external magnetic field and mean quantum dot radius. Effects of the spin admixture due to Dresselhaus contributi…
We report on the electronic properties of few interacting electrons confined in a parabolic quantum dot based on a theoretical approach developed to investigate the influence of Bychkov-Rashba spin-orbit (SO) interaction on such a system. We note that the spin-orbit coupling profoundly influences the energy spectrum of interacting electrons in a quantum dot. Here we present accurate results for the energy levels and optical-absorption spectra for parabolic quantum dots containing upto four interacting electrons, in the presence of spin-orbit coupling and under the influence of an externally ap…
The band modulation of the silicene and graphene quantum dots is investigated by a first-principles method. This study includes the ordinary silicene and graphene quantum dots and the embedded quantum dots in the hydrogenated silicene and graphene. The shapes and sizes of quantum dots are recognized as important factors for the electronic properties. We studied several types of quantum dots: triangular, parallelogram, rectangular, hexagonal dots. It demonstrates the energy gap of the quantum dot can be tuned by the dot size, the larger of the dot the smaller the energy gap. Moreover, the shape…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly increased mobility of 260,000 cm$^2$/Vs at a rather low density of $2.4\times10^{11}$ cm$^{-2}$. Using magneto-transport experiments, we characterize spin-orbit interactions by measuring weak antilocalization. Furthermore, by measuring Shubnikov-de Haas oscillations in tilted magnetic fields, we find that the g-factor agrees with $k \cdot p$ theory calculations at …
Double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin-orbit effective field in an InSb nanowire double dot. The obtained results are confirmed using spin blockade leakage current anisotropy and transport spectroscopy of individual quantum dots.
We show that two intriguing features of mesoscopic transport, namely the modulation of Coulomb blockade peak-heights and the transmission phase-lapses occurring between subsequent peaks, are closely related. Our analytic arguments are corroborated by numerical simulations for chaotic ballistic quantum dots. The correlations between the two properties are experimentally testable. The statistical distribution of the partial-width amplitude, at the heart of the previous relationship, is determined, and its characteristic parameters are estimated from simple models.
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fa…
Spin-orbit coupling effects are studied in quantum dots in InSb, a narrow-gap material. Competition between different Rashba and Dresselhaus terms is shown to produce wholesale changes in the spectrum. The large (and negative) $g$-factor and the Rashba field produce states where spin is no longer a good quantum number and intrinsic flips occur at moderate magnetic fields. For dots with two electrons, a singlet-triplet mixing occurs in the ground state, with observable signatures in intraband FIR absorption, and possible importance in quantum computation.
We investigate theoretically how the spin-orbit Dresselhaus and Rashba effects influence the electronic structure of quasi-one-dimensional semiconductor quantum dots, similar to those that can be formed inside semiconductor nanorods. We calculate electronic energy levels, eigen-functions, and effective g-factors for coupled, double dots made out of different materials, especially GaAs and InSb. We show that by choosing the form of the lateral confinement, the contributions of the Dresselhaus and Rashba terms can be tuned and suppressed, and we consider several possible cases of interest. We al…
We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of opposite-spin states, and allows phonon-mediated transitions between energy eigenstates. Contributions from all phonon modes and coupling mechanisms in zincblende semiconductors are taken into account. The spin relaxation rate is shown to display a sharp, cusp-like maximum as function of the interdot-barrier width, at a value of the width which can be controlled by…
We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the…
Understanding the spin dephasing mechanism is of fundamental importance in all potential applications of the spin qubit. Here we demonstrate a spin dephasing mechanism in semiconductor quantum dot due to the $1/f$ charge noise. The spin-charge interaction is mediated by the interplay between the spin-orbit coupling and the asymmetrical quantum dot confining potential. The dephasing rate is proportional to both the strength of the spin-orbit coupling and the degree of the asymmetry of the confining potential. For parameters typical of the InSb, InAs, and GaAs quantum dots with a moderate well-h…
We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the doping profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local doping is achieved with the realisation of up to two arsenic implantation steps in combination…
The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequency g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g tensor modulation resonance of the holes, due to the strong quadratic dependence of components of the hole g tensor on the electric field.
We propose a new mechanism for polarizing nuclear spins in quantum dots, based on periodic modulation of the hyperfine coupling by electric driving at the electron spin resonance frequency. Dynamical nuclear polarization results from resonant excitation rather than hyperfine relaxation mediated by a thermal bath, and thus is not subject to Overhauser-like detailed balance constraints. This allows polarization in the direction opposite to that expected from the Overhauser effect. Competition of the electrically-driven and bath assisted mechanisms can give rise to spatial modulation and sign rev…
We present measurements of transport through two tunnel-coupled quantum dots of different sizes connected in series in a strong, variable, perpendicular magnetic field. Double dot conductance was measured both as a function of magnetic field, which was varied across the filling factor nu = 4 quantum Hall plateau, and as a function of charge induced evenly on the two dots. The conductance peaks undergo position shifts and height modulations as the magnetic field is varied. These shifts and modulations form a pattern that repeats over large ranges of magnetic field and with the addition of doubl…
One and two-electron systems confined in a single and coupled quantum dots defined within a nanowire with a finite radius are studied in the context of spin-orbit coupling effects. Anisotropy of the spin-orbit interaction is discussed in terms of the system geometry and orientation of the external magnetic field vector. We find that there are easy and hard spin polarization axes and in the quantum dot with strong lateral confinement electron spin becomes well defined in spite of the presence of spin-orbit coupling. We present an analytical solution for the one-dimensional limit and study its v…
Precise manipulation of individual charge carriers in nanoelectronic circuits underpins practical applications of their most basic quantum property --- the universality and invariance of the elementary charge. A charge pump generates a net current from periodic external modulation of parameters controlling a nanostructure connected to source and drain leads; in the regime of quantized pumping the current varies in steps of $q_e f$ as function of control parameters, where $q_e$ is the electron charge and $f$ is the frequency of modulation. In recent years, robust and accurate quantized charge p…
We analyse the ground state of spinless fermions on a lattice in a weakly disordered potential, interacting via a nearest neighbour interaction, by applying the self-consistent Hartree-Fock approximation. We find that charge density modulations emerge progressively when r_s >1, even away from half-filling, with only short-range density correlations. Classical geometry dependent "magic numbers" can show up in the addition spectrum which are remarkably robust against quantum fluctuations and disorder averaging.
We address theoretically adiabatic regime of charge transport for a model of two tunnel-coupled quantum dots connected in series. The energy levels of the two dots are harmonically modulated by an external potential with a constant phase shift between the two. Motivated by recent experiments with surface-acoustic-wave excitation, we consider two situations: (a) pure pumping in the absence of external voltage (also at finite temperature), and (b) adiabatic modulation of the current driven by large external bias. In both cases we derive results consistent with published experimental data. For th…
An electrostatic quantum dot cannot be formed in monolayer graphene, because of the Klein tunnelling. However, a dot can be formed with the help of a uniform magnetic field. As shown here, a spatial modulation of the Dirac gap leads to confined states with discrete energy levels, thus defining a dot, without applying external electric and magnetic fields. Gap-induced dot states can coexist and couple with states introduced by an electrostatic potential. This property allows the region in which the resulting states are localized to be tuned with the potential.
Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-parity occupations become non-discernible (erased) both above and below the induced superconducting gap. Above the gap, conductance in the odd Coulomb valleys increases until the valleys are lifted. Below the gap, Andreev bound states undergo quantum phase transitions to singlet ground states at odd occupancy. We observe that the apparent erasure of odd-parity regimes coincides at low-bias and at high-bias. This observ…
We show that fractional charges can be realized at the boundaries of a linear array of tunnel coupled quantum dots in the presence of a periodically modulated onsite potential. While the charge fractionalization mechanism is similar to the one in polyacetylene, here the values of fractional charges can be tuned to arbitrary values by varying the phase of the onsite potential or the total number of dots in the array. We also find that the fractional boundary charges, unlike the in-gap bound states, are stable against static random disorder. We discuss the minimum array size where fractional bou…
Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual electrons through an InAs NW quantum dot (QD) device at frequencies up to $1.3\,$GHz. The QD is induced electrostatically in the NW by a series of local bottom gates in a state of the art device geometry. A periodic modulation of a single gate is enough to obtain a dc current proportional to the frequency of the modulation. The dc bias, the modulation amplitude a…
We study charge transport through a topological superconductor with a pair of Majorana end states, coupled to leads via quantum dots with resonant levels. The non-locality of the Majorana bound states opens the possibility of crossed Andreev reflection with nonlocal shot noise, due to the injection of an electron into one end of the superconductor followed by the emission of a hole at the other end. In the space of energies of the two resonant quantum dot levels, we find a four peaked clover-like pattern for the strength of noise due to crossed Andreev reflection, distinct from the single elli…
We have investigated nucleation of merons in double quantum dots when a lateral distortion with a reflection symmetry is present in the confinement potential. We find that merons can nucleate both inside and at the edge of the dots. In addition to these merons, our results show that electron density modulations can be also present inside the dots. An edge meron appears to have approximately a half integer winding number.
Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal along its growth direction. We derive a contribution to the g-factor that stems from an orbital effect of the magnetic field, which lifts the Kramers degeneracy in the nanocrystal by altering the mixing between the heavy and the light holes. We show that the relative displacement between the heavy- and light-hole wave functions, occurring upon applicat…
Time-dependent electron transport through a quantum dot and double quantum dot systems in the presence of polychromatic external periodic quantum dot energy-level modulations is studied within the time evolution operator method for a tight-binding Hamiltonian. Analytical relations for the dc-current flowing through the system and the charge accumulated on a quantum dot are obtained for the zero-temperature limit. It is shown that in the presence of periodic perturbations the sideband peaks of the transmission are related to combination frequencies of the applied modulations. For a double quant…
We present a detailed analysis of the electronic and optical properties of two-electron quantum dots with a two-dimensional Gaussian confinement potential. We study the effects of Coulomb impurities and the possibility of manipulate the entanglement of the electrons by controlling the confinement potential parameters. The degree of entanglement becomes highly modulated by both the location and charge screening of the impurity atom, resulting two regimes: one of low entanglement and other of high entanglement, with both of them mainly determined by the magnitude of the charge. It is shown that …
We demonstrate radio-frequency tuning of the energy of individual CdTe/ZnTe quantum dots (QDs) by Surface Acoustic Waves (SAWs). Despite the very weak piezoelectric coefficient of ZnTe, SAW in the GHz range can be launched on a ZnTe surface using interdigitated transducers deposited on a c-axis oriented ZnO layer grown on ZnTe containing CdTe QDs. The photoluminescence (PL) of individual QDs is used as a nanometer-scale sensor of the acoustic strain field. The energy of QDs is modulated by SAW in the GHz range and leads to characteristic broadening of time-integrated PL spectra. The dynamic mo…
We determine the locations of unintentional quantum dots (U-QDs) in a silicon nanowire with a precision of a few nanometers by comparing the capacitances to multiple gates with a capacitance simulation. Because we observe U-QDs in the same location of the wire in multiple devices, their cause is likely to be an unintended consequence of the fabrication, not random atomic-scale defects as is typically assumed. The locations of the U-QDs appear consistent with conduction band modulation from strain from the oxide and the gates. This allows us to suggest methods to reduce the frequency of U-QDs.
We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the system requires co-tunneling through the second dot which is $not$ in resonance with the leads. The observed amplitude modulation of the resulting current is found to reflect spin blockade events occurring through either of the two dots. We also confirm that charge redistribution events occurring in the off-resonance dot are detected indirectly via changes in …
We calculate the longitudinal-acoustic phonon scattering rate for a vertical double quantum dot system with weak lateral confinement and show that a strong modulation of the single-electron excited states lifetime can be induced by an external magnetic or electric field. The results are obtained for typical realistic devices using a Fermi golden rule approach and a three-dimensional description of the electronic quantum states.
Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman substates in the QD for various magnetic field directions. We find that the value and anisotropy of the g-factor depends on the type of orbital state which arises from the three-dimensional confinement anisotropy of the QD potential. Furthermore, the g-factor and its anisotropy are electrically tuned by a side-gate which modulates the confining potential.
On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization properties. Here, we report on the dynamic control of the optical emission from core-shell GaN/InGaN nanowire (NW) heterostructures using radio frequency surface acoustic waves (SAWs). The SAWs are excited on the surface of a piezoelectric lithium niobate crystal equipped with a SAW delay line onto which the NWs were mechanically transferred. Luminescent quantum…
We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and minimal drift in conductance when the device is set to the midpoint of a Coulomb blockade peak and held at constant gate bias. Bias spectroscopy measurements show typical Coulomb 'diamonds' free of any significant charge fluctuation noise. We also observe excited state transport in our device.
We study resonant tunneling through a periodic square array of quantum dots sandwiched between modulation-doped quantum wells. If a magnetic field is applied parallel to the quantum dot plane, the tunneling current exhibits a highly complex Aharonov-Bohm oscillation pattern due to the interference of multiple pathways traversed by a tunneling electron. Individual pathways associated with conductance beats can be enumerated by sweeping the magnetic field at various tilt angles. Remarkably, Aharonov-Bohm oscillations are aperiodic unless the magnetic field slope relative to the quantum dot latti…
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by the interplay between the QD confinement energy $\hbar ω_0$ and the tunneling gap $Δ_{SAS}$, the splitting between the symmetric and anti-symmetric delocalized single particle molecular states. The narrow line-widths displayed by electronic excitations in these nanostructures indicate promising venues for the spectroscopic investigation of entanglement of el…
We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot created in a long depleted channel with surface acoustic waves (SAWs). We demonstrate that such a process is characterized by an activation law with a threshold that depends on the SAW amplitude and the dot-channel potential gradient. By increasing sufficiently the SAW modulation amplitude, we can reach a regime where the transfer is unitary and potentially adiabatic. This study points at the relevant regime to use moving dots in quantum information protocols.
A theory of an optical vector pulsing soliton of self-induced transparency in an ensemble of semiconductor quantum dots is investigated. It is shown that a distribution of the excitonic ground-state transition dipole moments of the quantum dots and phase modulation changes significantly the pulse parameters. The profile of a circularly polarized optical two-component vector pulsing soliton with the difference and sum of the frequencies in the region of the carrier frequency is presented. It is shown that the vector pulsing soliton in the special case can be reduced to the scalar breather solut…
