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arXiv 0801.1354cond-mat.str-elcond-mat.mtrl-sci
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Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Rongwei Hu, K. J. Thomas, Y. Lee, T. Vogt, E. S. Choi, V. F. Mitrovic, R. P. Hermann, F. Grandjean, P. C. Canfield, J. W. Kim, A. I. Goldman, C. Petrovic

英文摘要:

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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