arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0710.4857physics.atom-phphysics.ins-det
收藏

低能高电荷离子束产生的闪烁光

Scintillation light produced by low-energy beams of highly-charged ions

M. Vogel, D. F. A. Winters, H. Ernst, H. Zimmermann, O. Kester

摘要:

测量了用来自电子束离子源(EBIS)和电子回旋共振离子源(ECRIS)的高电荷态离子的低能束辐照的各种无机闪烁器发射的闪烁光强度。具有$q$ =2和$q$ =18之间的各种电荷状态的氙离子束$^{q+}$已经以由ECRIS产生的每个电荷在5keV和17.5keV之间的能量使用。光束的强度通常在1和100 nA之间变化。束的高度带电的残留气体离子已产生的EBIS在4.5千电子伏每电荷和低强度下降到100 pA。使用的闪烁体材料是P46 YAG和P43磷光体的平面屏幕。在所有情况下,由CCD照相机检测从屏幕表面发射的闪烁光。闪烁光强度已被发现线性依赖于每一次沉积到闪烁体的离子动能,而高达$q$ =18没有显着的贡献,从离子的势能被发现。我们讨论的结果的背景下,可能使用的光束诊断,例如,在GSI,德国的新HITRAP设施。

英文摘要:

Measurements have been performed of scintillation light intensities emitted from various inorganic scintillators irradiated with low-energy beams of highly-charged ions from an electron beam ion source (EBIS) and an electron cyclotron resonance ion source (ECRIS). Beams of xenon ions Xe$^{q+}$ with various charge states between $q$=2 and $q$=18 have been used at energies between 5 keV and 17.5 keV per charge generated by the ECRIS. The intensity of the beam was typically varied between 1 and 100 nA. Beams of highly charged residual gas ions have been produced by the EBIS at 4.5 keV per charge and with low intensities down to 100 pA. The scintillator materials used are flat screens of P46 YAG and P43 phosphor. In all cases, scintillation light emitted from the screen surface was detected by a CCD camera. The scintillation light intensity has been found to depend linearly on the kinetic ion energy per time deposited into the scintillator, while up to $q$=18 no significant contribution from the ions' potential energy was found. We discuss the results on the background of a possible use as beam diagnostics e.g. for the new HITRAP facility at GSI, Germany.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑