大晶粒的分数组成：解释单相未掺杂微晶硅导电行为的独特微结构参数
Fractional composition of large crystallite grains: a unique microstructural parameter to explain conduction behavior in single phase undoped microcrystalline silicon
摘要：
我们研究了宽温度范围（15 - 450 K）内等离子体沉积的单相未掺杂微晶硅薄膜的宽微结构范围的暗电导率，以确定可能的输运机制以及薄膜微结构与电输运行为之间的相互关系。在具有不同微观结构的薄膜中看到的不同的导电行为解释的上下文中的基本传输机制和微观结构特征，高于和低于室温下的测量。我们的微观结构的研究表明，不同范围的组成大微晶晶粒（FCL）的微晶硅膜的体积分数的百分比对应于特征不同的和特定的微观结构，而不管沉积条件和厚度。我们的电输运研究表明，每种类型的微晶硅材料具有不同的Fcl范围显示出不同的电输运行为。
英文摘要：
We have studied the dark conductivity of a broad microstructural range of plasma deposited single phase undoped microcrystalline silicon films in a wide temperature range (15 - 450K) to identify the possible transport mechanisms and the interrelationship between film microstructure and electrical transport behavior. Different conduction behaviors seen in films with different microstructures are explained in the context of underlying transport mechanisms and microstructural features, for above and below room temperature measurements. Our microstructural studies have shown that different ranges of the percentage volume fraction of the constituent large crystallite grains (Fcl) of the microcrystalline silicon films correspond to characteristically different and specific microstructures, irrespective of deposition conditions and thicknesses. Our electrical transport studies demonstrate that each type of microcrystalline silicon material having a different range of Fcl shows different electrical transport behaviors.
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