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arXiv 0707.1807cond-mat.mes-hall
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石墨烯散射率和最小电导率的测量

Measurement of Scattering Rate and Minimum Conductivity in Graphene

Y. -W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, P. Kim

摘要:

对于迁移率在$1-20\times10^3$ cm $^2$ /V sec范围内的一组样品,研究了具有各种无序水平的石墨烯样品的电导率。将实验数据与基于带电杂质散射的理论输运计算进行比较,我们估计样品中的杂质浓度从$2-15\times 10^{11}$ cm $^{-2}$变化。在低载流子密度极限下,电导率表现出$2-12e^2/h$范围内的值,这可能与样品中不均匀电荷分布引起的残余密度有关。电导率曲线的形状表明,高迁移率的样品包含一些短程无序,而低迁移率的样品主要是由长程散射。

英文摘要:

The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from $2-15\times 10^{11}$ cm$^{-2}$. In the low carrier density limit, the conductivity exhibits values in the range of $2-12e^2/h$, which can be related to the residual density induced by the inhomogeneous charge distribution in the samples. The shape of the conductivity curves indicates that high mobility samples contain some short range disorder whereas low mobility samples are dominated by long range scatterers.

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