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arXiv 0707.0551cond-mat.supr-concond-mat.str-el
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La2-xSrxCuO4薄膜中赝能隙和x = 1/8反常的扫描隧道谱表征

Scanning tunneling spectroscopy characterization of the pseudogap and the x = 1/8 anomaly in La2-xSrxCuO4 thin films

Ofer Yuli, Itay Asulin, Gad Koren, Oded Millo

摘要:

使用扫描隧道光谱,我们研究了薄的c轴La 2-xSrxCuO 4薄膜的局域态密度,在宽的掺杂和温度范围内。我们发现,赝能隙只存在于掺杂水平低于最佳。对于x = 0.12,接近于“异常”x = 1/8掺杂水平,零偏压电导峰是主要的光谱特征,而不是例外的V形(c轴隧穿)带隙结构。我们已经确定,这种令人惊讶的效果不能用隧道进入(110)面来解释。这种独特的行为可能的起源进行了讨论。

英文摘要:

Using scanning tunneling spectroscopy we examined the local density of states of thin c-axis La2-xSrxCuO4 films, over wide doping and temperature ranges. We found that the pseudogap exists only at doping levels lower than optimal. For x = 0.12, close to the 'anomalous' x = 1/8 doping level, a zero bias conductance peak was the dominant spectral feature, instead of the excepted V- shaped (c-axis tunneling) gap structure. We have established that this surprising effect cannot be explained by tunneling into (110) facets. Possible origins for this unique behavior are discussed.

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