GaN双势垒结构中的自旋电流和电极化
Spin current and electrical polarization in GaN double-barrier structures
摘要：
计算了AlGaN/GAN双势垒结构中的隧道自旋极化。结果表明，压电场和自发极化提高了隧道自旋注入的效率。的电极化和自旋取向之间的关系允许工程零磁场自旋注入操纵晶格失配应变与铝含量的障碍。
英文摘要：
Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The relation between the electrical polarization and the spin orientation allows engineering a zero magnetic field spin injection manipulating the lattice-mismatch strain with an Al-content in the barriers.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
