有机场效应晶体管中的电子-声子和电子-电子相互作用
Electron-phonon and electron-electron interactions in organic field effect transistors
摘要：
最近的实验表明，有机FET的性能强烈地依赖于栅极绝缘体的介电性质。特别是，它已被证明，温度依赖性的迁移率从金属类绝缘行为时，增加栅极材料的介电常数的演变。这种现象可以用小极化子的形成来解释，这是由于载流子与声子在有机/电介质界面处的极性相互作用。在此模型的基础上，分析了高浓度下载流子间库仑排斥的可能后果。
英文摘要：
Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a metallic-like to an insulating behavior upon increasing the dielectric constant of the gate material. This phenomenon can be explained in terms of the formation of small polarons, due to the polar interaction of the charge carriers with the phonons at the organic/dielectric interface. Building on this model, the possible consequences of the Coulomb repulsion between the carriers at high concentrations are analyzed.
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