衬底电荷对窄导电沟道中电子输运的影响
Influence of substrate charge on electron transport in narrow conducting channel
摘要：
在0.6-1.5 K温度范围内，研究了液氦表面准一维非均匀导电通道中的电子输运。不均匀性是通过给其上形成导电通道的衬底充电而产生的。已经确定，在某些衬底电荷下，电子电导率实际上不依赖于温度。所得到的结果解释了本地化的载流子和创建的电子极化子。
英文摘要：
The electron transport in inhomogeneous quasi-one-dimensional conducting channels on the liquid helium surface are studied in the temperature range 0.6-1.5 K. Inhomogeneities are created by charging the substrate on which the conducting channels are formed. It has been established that the electron conductivity practically does not depend on temperature at some substrate charge. The results obtained are explained by localization of carriers and creation of electron polarons.
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