Al_ xGa_{1-x} N/GaN窄丝中自旋轨道散射长度的增强
Enhanced spin-orbit scattering length in narrow Al_xGa_{1-x}N/GaN wires
摘要：
研究了一组完全相同的平行AlGaN/GAN量子线结构中的磁输运特性。线的宽度在1110 nm和340 nm之间。对于所有的电线套明确的Shubnikov-de Haas振荡观察。我们发现，电子浓度和迁移率是大致相同的所有线，确认AlGaN/GAN异质结构中的电子气不恶化的线结构的制造过程。对于较宽的量子线，明显观察到弱的反定域效应，表明存在自旋轨道耦合。对于有效电宽度小于250 nm的窄量子线，弱的反定域效应被抑制。通过比较实验数据与准一维结构的理论模型，我们得出的结论是，自旋轨道散射的长度增加在窄线。
英文摘要：
The magnetotransport in a set of identical parallel AlGaN/GaN quantum wire structures was investigated. The width of the wires was ranging between 1110 nm and 340 nm. For all sets of wires clear Shubnikov--de Haas oscillations are observed. We find that the electron concentration and mobility is approximately the same for all wires, confirming that the electron gas in the AlGaN/GaN heterostructure is not deteriorated by the fabrication procedure of the wire structures. For the wider quantum wires the weak antilocalization effect is clearly observed, indicating the presence of spin-orbit coupling. For narrow quantum wires with an effective electrical width below 250 nm the weak antilocalization effect is suppressed. By comparing the experimental data to a theoretical model for quasi one-dimensional structures we come to the conclusion that the spin-orbit scattering length is enhanced in narrow wires.
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