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arXiv 0704.0607cond-mat.mes-hallcond-mat.mtrl-sci
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石墨烯太赫兹受激发射放大等离子体激元

Plasmon Amplification through Stimulated Emission at Terahertz Frequencies in Graphene

Farhan Rana, Faisal R. Ahmad

摘要:

我们表明,二维石墨烯中的等离子体激元可以在太赫兹频率下获得净增益。在反转的石墨烯层中等离子体激元与带间电子-空穴跃迁的耦合可以通过受激发射过程导致等离子体激元放大。我们计算不同的电子空穴密度和温度的等离子体增益,并表明,增益值可以超过$10^{4}$厘米$^{-1}$在1-10太赫兹的频率范围内,电子空穴密度在$10^{9}$ - $10^{11}$厘米$^{-2}$范围内,即使当等离子体能量损失由于带内散射被认为是。等离子体激元被发现表现出带内散射时间短于100 fs的净增益。这样的高增益值可以允许尺寸在1-10 $μ$ m范围内的极其紧凑的太赫兹放大器和振荡器。

英文摘要:

We show that plasmons in two-dimensional graphene can have net gain at terahertz frequencies. The coupling of the plasmons to interband electron-hole transitions in population inverted graphene layers can lead to plasmon amplification through the process of stimulated emission. We calculate plasmon gain for different electron-hole densities and temperatures and show that the gain values can exceed $10^{4}$ cm$^{-1}$ in the 1-10 terahertz frequency range, for electron-hole densities in the $10^{9}$-$10^{11}$ cm$^{-2}$ range, even when plasmon energy loss due to intraband scattering is considered. Plasmons are found to exhibit net gain for intraband scattering times shorter than 100 fs. Such high gain values could allow extremely compact terahertz amplifiers and oscillators that have dimensions in the 1-10 $μ$m range.

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