arXiv 0704.03402007-04-03quant-ph

表面诱导势场中原子的声子介导衰变

Phonon-mediated decay of an atom in a surface-induced potential

Fam Le Kien, S. Dutta Gupta, K. Hakuta

备注：: 14 pages, 15 figures

摘要：

本文研究了表面诱导势中声子介导的原子平移能级间的跃迁。我们提出了一个通用的主方程的动力学的平移态的原子。在德拜模型的框架下，我们推导出了向上和向下跃迁速率的紧致表达式。数值计算的过渡率进行深二氧化硅诱导的潜力，允许大量的束缚能级以及自由态的铯原子。的总吸收率被证明是主要由深束缚能级的束缚到束缚的过渡和浅束缚能级的束缚到自由的过渡。此外，声子发射和吸收过程可以是数量级更大的深束缚能级相比，浅束缚的。我们还研究了从自由状态的各种类型的过渡。我们发现，对于热原子铯的温度范围从100 $μ$ K到400 $μ$ K在附近的二氧化硅表面的温度为300 K，吸附（自由结合衰减）率约为2倍大于加热（自由自由向上衰减）率，而冷却（自由向下衰减）率是可以忽略不计的。

英文摘要：

We study phonon-mediated transitions between translational levels of an atom in a surface-induced potential. We present a general master equation governing the dynamics of the translational states of the atom. In the framework of the Debye model, we derive compact expressions for the rates for both upward and downward transitions. Numerical calculations for the transition rates are performed for a deep silica-induced potential allowing for a large number of bound levels as well as free states of a cesium atom. The total absorption rate is shown to be determined mainly by the bound-to-bound transitions for deep bound levels and by bound-to-free transitions for shallow bound levels. Moreover, the phonon emission and absorption processes can be orders of magnitude larger for deep bound levels as compared to the shallow bound ones. We also study various types of transitions from free states. We show that, for thermal atomic cesium with temperature in the range from 100 $μ$K to 400 $μ$K in the vicinity of a silica surface with temperature of 300 K, the adsorption (free-to-bound decay) rate is about two times larger than the heating (free-to-free upward decay) rate, while the cooling (free-to-free downward decay) rate is negligible.

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