表面栅控GaAs-based量子器件中的脉冲诱导声电振动
Pulse-induced acoustoelectric vibrations in surface-gated GaAs-based quantum devices
摘要：
我们提出了一个数值研究的结果，它显示了激励的声电模式的振动在GaAs基异质结构由于尖锐的纳秒级电场脉冲施加在表面栅极。特别是，我们表明，施加在量子信息处理应用中的脉冲能够激发声电振动模式，包括表面声模式，传播的距离大于传统的设备尺寸。我们表明，脉冲引起的声电振动能够引起显着的不希望的扰动量子系统的演化。
英文摘要：
We present the results of a numerical investigation which show the excitation of acoustoelectric modes of vibration in GaAs-based heterostructures due to sharp nano-second electric-field pulses applied across surface gates. In particular, we show that the pulses applied in quantum information processing applications are capable of exciting acoustoelectric modes of vibration including surface acoustic modes which propagate for distances greater than conventional device dimensions. We show that the pulse-induced acoustoelectric vibrations are capable of inducing significant undesired perturbations to the evolution of quantum systems.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
