太赫兹引起的GaAs中中性施主基态布居的耗尽--施主束缚激子的共振弹性光散射测量
Terahertz-induced depletion of the ground-state population of neutral donors in GaAs measured by resonant elastic light scattering from donor-bound excitons
摘要：
GaAs（1.514eV）中施主束缚激子跃迁的强共振弹性光散射（RELS）发生在基态（1 S）的中性施主处，而不是激发态类氢的中性施主处。当1.6太赫兹辐射入射到中性施主的系综上时，我们观察到RELS降低了30%，对应于中性施主在其基态中的人口减少。这种光学检测方法类似于用于读出离子阱量子计算机和金刚石氮空位中心的量子非破坏测量技术。在该方案中，束缚激子的俄歇复合，其在测量期间改变施主的状态，限制了测量保真度和最大NIR激发强度。
英文摘要：
Strong resonant elastic light scattering (RELS) from the donor-bound exciton transition in GaAs (1.514eV) occurs at neutral donors in the ground (1S) state, but not at neutral donors in excited hydrogenic states. When 1.6 THz radiation is incident on an ensemble of neutral donors, we observe up to a 30% decrease in the RELS, corresponding to a decrease in the population of neutral donors in their ground states. This optical detection method is similar to quantum nondemolition measurement techniques used for readout of ion trap quantum computers and diamond nitrogen-vacancy centers. In this scheme, Auger recombination of the bound exciton, which changes the state of the donor during measurement, limits the measurement fidelity and maximum NIR excitation intensity.
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