基于ZnSe微腔的激子-光子耦合
Exciton-photon coupling in a ZnSe based microcavity fabricated using epitaxial liftoff
摘要：
我们报道了在用外延剥离法制作的ZnSe基微腔中观察到的强激子-光子耦合。将分子束外延生长的ZnSe/Zn $_{0.9}$ Cd $_{0.1}$ Se量子阱（在激子发射处具有一个波长的光学长度）转移到反射率为96%的SiO $_2$ /Ta $_2$ O $_5$镜上以形成精细匹配的微腔。我们的角度分辨透射光谱的分析揭示了强耦合制度的关键特征：在$20 K$的$23.6 meV$的正常模式分裂的反交叉;复合演化的下部和上部极化激元;和共振附近的下部极化激元线宽变窄。每个量子阱的重空穴激子振子强度也被推导为$1.78 \times 10^{13} cm^{-2}$。
英文摘要：
We report the observation of strong exciton-photon coupling in a ZnSe based microcavity fabricated using epitaxial liftoff. Molecular beam epitaxial grown ZnSe/Zn$_{0.9}$Cd$_{0.1}$Se quantum wells with a one wavelength optical length at the exciton emission were transferred to a SiO$_2$/Ta$_2$O$_5$ mirror with a reflectance of 96% to form finesse matched microcavities. Analysis of our angle resolved transmission spectra reveals key features of the strong coupling regime: anticrossing with a normal mode splitting of $23.6 meV$ at $20 K$; composite evolution of the lower and upper polaritons; and narrowing of the lower polariton linewidth near resonance. The heavy hole exciton oscillator strength per quantum well is also deduced to be $1.78 \times 10^{13} cm^{-2}$.
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