平行窄梁MEMS结构电容的快速精确三维计算
Fast and Precise 3D Computation of Capacitance of Parallel Narrow Beam MEMS Structures
摘要：
电致动MEMS器件的有效设计和性能需要精确估计MEMS结构上的静电力。这反过来又需要深入研究结构的电容，最后研究器件各个表面上的电荷密度分布。在这项工作中，几乎精确的边界元解决方案已被提供，以估计这些属性的平行窄梁结构中发现的MEMS器件。三维效应，这是这些结构的一个重要方面，和相关的边缘场进行了详细的研究。一个合理的大的参数空间已被覆盖，以遵循各种几何因素的电容的变化。目前的结果进行了比较，所获得的经验参数化的表达式保持在视图中的计算速度的要求。指出了经验公式的局限性，并讨论了改进的可能途径。
英文摘要：
Efficient design and performance of electrically actuated MEMS devices necessitate accurate estimation of electrostatic forces on the MEMS structures. This in turn requires thorough study of the capacitance of the structures and finally the charge density distribution on the various surfaces of a device. In this work, nearly exact BEM solutions have been provided in order to estimate these properties of a parallel narrow beam structure found in MEMS devices. The effect of three-dimensionality, which is an important aspect for these structures, and associated fringe fields have been studied in detail. A reasonably large parameter space has been covered in order to follow the variation of capacitance with various geometric factors. The present results have been compared with those obtained using empirical parametrized expressions keeping in view the requirement of the speed of computation. The limitations of the empirical expressions have been pointed out and possible approaches of their improvement have been discussed.
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