用于多GEM结构中离子回流抑制的电和光电门
Electric and Photoelectric Gates for ion backflow suppression in multi-GEM structures
摘要：
提出了一种抑制多GEM结构中离子回流的新方法。在该方法中，与标准配置相比，跨两个相邻GEM之间的间隙施加的电势差被反转。在这种称为电栅极的间隙结构中，从第一GEM到第二GEM的信号传输可能由在小栅极电压下仍然存在并连接两个GEM的孔的小残余场提供。另一方面，GEM之间的离子回流被证明大大减少。我们还考虑另一种配置，称为光电门，其中除了电子门配置，碘化铯光电阴极沉积在第二GEM。在光电门中，通过间隙的离子回流被完全抑制，并且通过间隙的信号传递由光电机构提供，这是由于第一GEM中的雪崩振荡或取代第一GEM的电致发光间隙中的成比例振荡。电子门的想法可能会在TPC探测器和气体光电倍增管领域得到应用。光电门的想法在两相雪崩探测器领域更相关。
英文摘要：
A new approach to suppress ion backflow in multi-GEM structures is suggested. In this approach, the potential difference applied across the gap between two adjacent GEMs is reversed compared to the standard configuration. In such a gap structure, called Electric Gate, a signal transfer from the first to second GEM is presumably provided by the small residual field still existing at small gate voltages and connecting the holes of the two GEMs. On the other hand, ion backflow between the GEMs turned out to be substantially reduced. We also consider another configuration, called Photoelectric Gate, in which in addition to the Electric Gate configuration, a CsI photocathode is deposited on the second GEM. In the Photoelectric Gate, ion backflow through the gap is fully suppressed and the signal transfer through the gap is provided by the photoelectric mechanism due to either avalanche scintillations in the first GEM or proportional scintillations in the electroluminescence gap replacing the first GEM. The idea of the Electric Gate might find applications in the field of TPC detectors and gas photomultipliers. The idea of the Photoelectric Gate is more relevant in the field of two-phase avalanche detectors.
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