扫描探针与半导体纳米晶的相互作用近场光学成像的物理机制和基础
Interaction of scanning probes with semiconductor nanocrystals; Physical mechanism and basis for near field optical imaging
摘要：
我们研究了金属和半导体原子力显微镜（AFM）针尖附近的单半导体双量子点（NC）的光致发光（PL）的改变。尖端的存在通过干涉改变了发射器的辐射衰减速率，并通过能量传递到尖端材料打开了有效的非辐射衰减通道。这些效应导致发射器的PL强度的淬灭（或增强），作为其与相互作用尖端的距离的函数。我们利用这种高度距离依赖效应来实现高分辨率光学成像的对比度机制。通过与InAs NC的化学功能化，将AFM针尖优化为能量受体，以实现低至30 nm的光学分辨率。所提出的实验方案提供了高分辨率的光学信息，同时保持传统的AFM成像的好处。我们直接测量单个NC的PL强度作为尖端距离的函数。我们的结果与描述振荡偶极子与平面镜相互作用的经典理论模型的计算结果吻合得很好。
英文摘要：
We investigate the modification of photoluminescence (PL) from single semiconductor nanocrystal quantum dots (NCs) in proximity of metal and semiconducting Atomic Force Microscope (AFM) tips. The presence of the tip alters the radiative decay rate of an emitter via interference and opens efficient non radiative decay channels via energy transfer to the tip material. These effects cause quenching (or enhancement) of the emitter's PL intensity, as a function of its distance from the interacting tip. We take advantage of this highly distance dependent effect to realize a contrast mechanism for high resolution optical imaging. AFM tips are optimized as energy acceptors by chemical functionalization with InAs NCs to achieve optical resolution down to 30 nm. The presented experimental scheme offers high resolution optical information while maintaining the benefits of traditional AFM imaging. We directly measure the PL intensity of single NCs as a function of the tip distance. Our results are in good agreement to calculation made by a classical theoretical model describing an oscillating dipole interacting with a planar mirror.
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