UTA与EUVL的谱线发射：NIST EBIT上氙发射的研究
UTA versus line emission for EUVL: Studies on xenon emission at the NIST EBIT
摘要：
在NIST EBIT上记录了氙离子的光谱，与从4d-4f和4p-4d跃迁在13.5 nm处产生的发射相比，从4d-5 p跃迁在13.5 nm处产生的发射具有2%的带宽，并且与从未分辨跃迁阵列（UTA）获得的发射相比，观察到峰值略低于11 nm。发现使用UTA而不是4d-5 p发射可以在光子产额方面获得五倍的改善。的结果进行了比较与原子结构计算，并意味着一个显着的增益效率应获得使用锡，其中在13.5 nm的发射来自一个类似的UTA，而不是氙作为EUVL源材料。
英文摘要：
Spectra from xenon ions have been recorded at the NIST EBIT and the emission into a 2% bandwidth at 13.5 nm arising from 4d-5p transitions compared with that from 4d-4f and 4p-4d transitions in Xe XI and also with that obtained from the unresolved transition array (UTA) observed to peak just below 11 nm. It was found that an improvement of a factor of five could be gained in photon yield using the UTA rather than the 4d-5p emission. The results are compared with atomic structure calculations and imply that a significant gain in efficiency should be obtained using tin, in which the emission at 13.5 nm comes from a similar UTA, rather than xenon as an EUVL source material.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
