InAs/AlGaAs量子点基纳米团簇的近场光致发光研究：带填充效应
Near-field photoluminescence study of InAs/AlGaAs quantum-dot-based nanoclusters: band filling effect
摘要：
我们已经进行了近场光谱和显微镜的InAs/AlGaAs量子点为基础的纳米团簇。据观察，空间受限的激子在纳米团簇的光致发光谱蓝移高达20毫电子伏的功率密度的增加。特别地，近场光致发光图像已经示出，随着激发功率的增加，激子从较低的能态（1.4150 eV）到较高的能态（1.4392 eV）逐渐变得空间受限，这指示半导体纳米结构的带填充效应。
英文摘要：
We have performed near-field spectroscopy and microscopy of the InAs/AlGaAs quantum-dot-based nanoclusters. It is observed that the photoluminescence spectra of spatially confined excitons in the nanoclusters is blue-shifted up to 20 meV as the power density is increased. In particular, the near-field photoluminescence images have shown that excitons became spatially confined gradually from lower energy state (1.4150 eV) to higher energy state (1.4392 eV) as the excitation power is increased, which is indicative of the band-filling effect of semiconductor nanostructures.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
