高速p-i-n光电二极管中的闪烁噪声
Flicker noise in high-speed p-i-n photodiodes
摘要：
在检测调制光束的光电二极管的输出处的微波信号包含检测器的相位噪声phi（t）和幅度噪声alpha（t）。除了众所周知的白噪声之外，谱密度S_phi（f）和S_alpha（f）显示与1/f成比例的闪烁噪声。本文报道了高速p-i-n光电二极管相位噪声和幅度噪声的测量。主要结果是，对于相位噪声，样本的闪烁系数约为1 E-12 rad ^2/Hz（-120 dB），对于幅度噪声，约为1 E-12 Hz^-1（-120 dB）。这些数值只有在解决了一些实验问题后，并在受保护的环境中才能观察到。相比之下，在普通条件下，EMI隔离不足以及机械隔离不足是吸收额外噪声的原因。这表明，如果重新审视封装和EMC，应用可以充分利用p-i-n光电二极管令人惊讶的低噪声。
英文摘要：
The microwave signal at the output of a photodiode that detects a modulated optical beam contains the phase noise phi(t) and the amplitude noise alpha(t) of the detector. Beside the white noise, which is well understood, the spectral densities S_phi(f) and S_alpha(f) show flicker noise, proportional to 1/f. We report on the measurement of the phase and amplitude noise of high-speed p-i-n photodiodes. The main result is that the flicker coefficient of the samples is approximately 1E-12 rad^2/Hz (-120dB) for phase noise, and approximately 1E-12 Hz^-1 (-120dB) for amplitude noise. These values could be observed only after solving a number of experimental problems and in a protected environment. By contrast, in ordinary conditions insufficient EMI isolation, and also insufficient mechanical isolation, are responsible for additional noise to be taken in. This suggests that if package and EMC are revisited, applications can take the full benefit from the surprisingly low noise of the p-i-n photodiodes.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
