The reversible phase transition induced by femtosecond laser excitation of Gallium has been studied by measuring the dielectric function at 775 nm with ~ 200 fs temporal resolution. The real and imaginary parts of the transient dielectric function were calculated from absolute reflectivity of Gallium layer measured at two different angles of incidence, using Fresnel formulas. The time-dependent electron-phonon effective collision frequency, the heat conduction coefficient and the volume fraction of a new phase were restored directly from the experimental data, and the time and space dependent electron and lattice temperatures in the layer undergoing phase transition were reconstructed without ad hoc assumptions. We converted the temporal dependence of the electron-phonon collision rate into the temperature dependence, and demonstrated, for the first time, that the electron-phonon collision rate has a non-linear character. This temperature dependence converges into the known equilibrium function during the cooling stage. The maximum fraction of a new phase in the laser-excited Gallium layer reached only 60% even when the deposited energy was two times the equilibrium enthalpy of melting. We have also demonstrated that the phase transition pace and a fraction of the transformed material depended strongly on the thickness of the laser-excited Gallium layer, which was of the order of several tens of nanometers for the whole range of the pump laser fluencies up to the damage threshold. The kinetics of the phase transformation after the laser excitation can be understood on the basis of the classical theory of the first-order phase transition while the duration of non-thermal stage appears to be comparable to the sub-picosecond pulse length.
We report on femtosecond laser writing of single mode optical waveguides in chalcogenide Gallium Lanthanum Sulphide (GLS) glass. A multiscan fabrication process was employed to create waveguides with symmetric single mode guidance and low insertion losses at 800 nm wavelength, compatible with Ti:Sapphire ultrafast lasers. μRaman and X-Ray microanalysis were used to elucidate the origin of the laser-induced refractive index change in GLS. Nonlinear refractive index measurements of the waveguides were performed by finding the optical switching parameters of a directional coupler, demonstrating t…
The authors describe the fabrication of buried waveguides in a highly nonlinear chalcogenide glass, gallium lanthanum sulfide, using focused femtosecond laser pulses. Through optical characterization of the waveguides, they have proposed a formation mechanism and provide comparisons to previous work. Tunneling has been identified as the dominant nonlinear absorption mechanism in the formation of the waveguides. Single mode guidance at 633 nm has been demonstrated. The writing parameters for the minimum propagation loss of 1.47 dB/cm are 0.36 uJ pulse energy and 50 um/s scanning speed.
Formation of femtosecond laser direct-written positive refractive index waveguides in Gallium Lanthanum Sulphide (GLS) glass is explained for the first time. Evidence of structural changes and ion migration are presented using Raman spectroscopy and electron probe microanalysis (EPMA), respectively. 2-D Raman spectra maps reveal a peak shift and full-width at half maximum variations in the symmetric vibrations of GaS4 main band. For the first time, the 2D map of the boson band was successfully used to identify and understand the material densification profile in a high refractive index glass w…
We report on the experimental observation of selective delamination of semi-transparent materials on the example of yttria-stabilized zirconia ceramics upon femtosecond laser processing of its surface with low numerical aperture lens. The delamination of a ceramic layer of dozens of micrometers takes place as a by-side effect of surface processing and is observed above the surface ablation threshold. The onset of delamination (delamination threshold) depends on the degree of overlap of the irradiation spots from consecutive laser pulses upon beam scanning over material surface. Analysis of the…
We investigate photoinization, energy deposition, plasma formation and the ultrafast optical breakdown in crystalline silicon irradiated by intense near-infrared laser pulses with pulse duration $τ\le $ 100 fs. The occurrence of high-intensity breakdown was established by the sudden increase of the absorbed laser energy inside the bulk, which corresponds to threshold energy fluence $Φ_{th} > $ 1 J/cm$^2$. The optical breakdown is accompanied by severe spectral broadening of the transmitted pulse. For the studied irradiation conditions, we find that the threshold fluence increases linearly with…
Although ultrafast laser materials processing has advanced at a breakneck pace over the last two decades, most applications have been developed with laser pulses at near-IR or visible wavelengths. Recent progress in mid-infrared (MIR) femtosecond laser source development may create novel capabilities for material processing. This is because, at high intensities required for such processing, wavelength tuning to longer wavelengths opens the pathway to a special regime of laser-solid interactions. Under these conditions, due to the $λ^2$ scaling, the ponderomotive energy of laser-driven electron…
We report on a self-organized process initiated on a potassium-tungsten-tellurite glass surface under repetitive femtosecond laser irradiation in a regime where cumulative effects lead to a localized melting. Specifically, we show that self-organized periodic patterns consisting of parallel nanoplanes perpendicular to the laser polarization are forming and extending beyond the zone under direct laser exposure. Examination of the modified regions revealed a phase change from a glassy tellurium-oxide to a crystalline elemental tellurium. In addition, we observe that this self-organization proces…
Probing laser-driven surface and subsurface dynamics via grazing-incidence XFEL scattering and diffraction
European X-ray Free-Electron Laser Facility（欧洲X射线自由电子激光设施）；Department Physik, Universität Siegen（锡根大学物理系）；Helmholtz-Zentrum Dresden-Rossendorf（德累斯顿-罗斯多夫亥姆霍兹中心）；Department of Physics and Research Center OPTIMAS, RPTU University Kaiserslautern–Landau（凯泽斯劳滕-兰道理科大学物理系及OPTIMAS研究中心）
