由重吸收畸变共振多重态的相对强度确定非平衡等离子体中B、Al、Ga和Si原子的绝对密度
Determination of absolute densities of B, Al, Ga and Si atoms in non-equilibrium plasmas from relative intensities in resonance multiplets distorted by reabsorption
摘要：
本文将最近提出的微波等离子体中硼原子密度的光谱测定方法推广到B、Al、Ga、Si原子。该方法是基于测量的相对强度对谱线属于具有共同的上能级的共振多重态。结果表明，当等离子体中谱线的重吸收足够时，谱线强度比依赖于气体温度T和基态原子总密度N与等离子体柱长度L的乘积NL。因此，在B、Al、Ga双峰的情况下，温度T应该是已知的。Si的共振多重峰（三个独立的强度比）提供了获得T和N两者的机会，并且甚至组织对所提出的方法对某些等离子体条件的适用性的内部检查。在T=300-2400 K和NL=10^7-10^15 cm^（-3）m下计算了B、Al、Ga和Si的共振线的比值。数值计算的结果和适用范围的方法进行了讨论。
英文摘要：
The approach proposed recently as a spectroscopic tecnique of a boron density determination in microwave plasma has been expanded for B, Al, Ga, Si atoms and generalized. The method is based on measurements of relative intensities of pairs of spectral lines belonging to resonance multiplets having common upper level. It is shown that when the reabsorption of the lines within plasma is sufficient, then the intensity ratios depend on the gas temperature T and the product NL of total density of the ground state atoms N and a length of a plasma column L. Thus in the case of the B, Al, Ga doublets the temperature T should be known. The resonance multiplet of Si (three independent intensity ratios) provides an opportunity to obtain both T and N and even to organize internal check of the applicability of the proposed method to certain plasma conditions. The ratios were calculated for resonance lines of B, Al, Ga and Si under T=300-2400 K and NL=10^7-10^15 cm^(-3) m. The results of numerical calculations and ranges of applicability of the method are discussed.
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