均匀大面积雕塑薄膜结构中纳米尺度和微米尺度的混合
Blending of nanoscale and microscale in uniform large-area sculptured thin-film architectures
摘要：
首次实现了在光刻限定图案上组装复杂形状纳米线中的大厚度（$>3$ $μ$ m）、大面积均匀性（直径75 mm）、高生长速率（高达0.4 $μ$ m/min）的组合。因此，纳米尺度和微米尺度在具有横向结构的雕刻薄膜中混合在一起。用电子束蒸发法在硅衬底上生长了$_x$（$x\approx 2$）纳米线，并对其结构进行了分析。由于斜角沉积，原子自遮蔽使纳米线能够连续生长，突然改变方向，并保持恒定的横截面直径。选择性生长的纳米线组件的顶面上的1-D和2-D阵列可以理解和预测使用简单的几何阴影方程。
英文摘要：
The combination of large thickness ($>3$ $μ$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $μ$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the first time. The nanoscale and the microscale have thus been blended together in sculptured thin films with transverse architectures. SiO$_x$ ($x\approx 2$) nanowires were grown by electron--beam evaporation onto silicon substrates both with and without photoresist lines (1--D arrays) and checkerboard (2--D arrays) patterns. Atomic self--shadowing due to oblique--angle deposition enables the nanowires to grow continuously, to change direction abruptly, and to maintain constant cross--sectional diameter. The selective growth of nanowire assemblies on the top surfaces of both 1--D and 2--D arrays can be understood and predicted using simple geometrical shadowing equations.
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