用于硅基单片semiconducting/YBa2Cu3O7-d超导器件制造的PMOS器件的Pt基金属化
Pt-based metallization of PMOS devices for the fabrication of monolithic semiconducting/YBa2Cu3O7-d superconducting devices on silicon
摘要：
采用射频溅射法在Si和SiO2衬底上制备了Mo、Pt、Pt/Mo和Pt/Ti薄膜，并在YBa_2Cu_3 O_（7-d）生长条件下进行了退火处理。测量退火对未图案化层的薄层电阻的影响。提出了一种用于PMOS器件的Pt基多层金属化工艺，并在同一硅衬底上实现了PMOS器件和YBCO传感器的单片集成。Pt/Ti/Mo硅化物结构在（700^{\circ}）C和（0.5 mbar O（2））压力下退火60 min后，互连片电阻率和$ 2 \times 10^{-4} Ω\cdot cm^{2}$比接触电阻率均为（0.472 Ω \Box）。
英文摘要：
Mo, Pt, Pt/Mo and Pt/Ti thin films have been deposited onto Si and SiO2 substrates by RF sputtering and annealed in the YBa2Cu3O7-d growth conditions. The effect of annealing on the sheet resitance of unpatterned layers was measured. A Pt-based multilayered metallization for the PMOS devices was proposed and tested for the monolithic integration of PMOS devices and YBCO sensors on the same silicon substrate. The best results were obtained with a Pt/Ti/Mo-silicide structure showing (0.472 Ω_{\Box}) interconnect sheet resistivity and $ 2 \times 10^{-4} Ω\cdot cm^{2}$ specific contact resistivity after annealing for (60) minutes at (700^{\circ})C in (0.5) mbar O(_{2}) pressure.
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