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arXiv physics/0210016physics.acc-ph
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X波段行波结构的射频处理剖析

Autopsy on an RF-Processed X-band Travelling Wave Structure

F. Le Pimpec, S. Harvey, R. E. Kirby, F. Marcelja

摘要:

为了找到X波段加速结构中高电场击穿的原因,我们对一个RF处理结构进行了干净的解剖(没有操作后结构拆卸所添加的碎片)。通过射频反射波分析和声学传感器拾取操作提供的宏观定位用于将故障与尸检的弹坑损坏区域连接起来。令人惊讶的是,显微镜分析显示,在低电场的区域有击穿坑。输入耦合器尖角处的磁场感应的高电流似乎是观察到的极端击穿损坏的原因。

英文摘要:

In an effort to locate the cause(s) of high electric-field breakdown in x-band accelerating structures, we have cleanly-autopsied (no debris added by post-operation structure disassembly) an RF-processed structure. Macroscopic localization provided operationally by RF reflected wave analysis and acoustic sensor pickup was used to connect breakdowns to autopsied crater damage areas. Surprisingly, the microscopic analyses showed breakdown craters in areas of low electric field. High currents induced by the magnetic field on sharp corners of the input coupler appears responsible for the extreme breakdown damage observed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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