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arXiv physics/02040782002-04physics.ins-dethep-ex

一种计算硅探测器洛仑兹角的算法

An algorithm for calculating the Lorentz angle in silicon detectors

V. Bartsch, W. de Boer, J. Bol, A. Dierlamm, E. Grigoriev, F. Hauler, S. Heising, L. Jungermann

备注：: 13 pages, 7 figures, final version accepted by NIMA. Mainly clarifications included and slightly shortened
发表信息：: Nucl.Instrum.Meth. A497 (2003) 389-396
DOI：: 10.1016/S0168-9002(02)01801-6

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摘要：

未来的实验将在LHC（大型强子对撞机）和高磁场的恶劣辐射环境中使用硅传感器。由于高磁场，载流子的漂移方向受到洛伦兹力的影响。此外，由此产生的辐射损伤改变了漂移的性质。本文综述了辐照前后电子和空穴的洛仑兹角的测量结果，并与计算洛仑兹角的简单算法进行了比较。

英文摘要：

Future experiments will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is affected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift. In this paper measurements of the Lorentz angle of electrons and holes before and after irradiation are reviewed and compared with a simple algorithm to compute the Lorentz angle.

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