高温退火过程中富Ga GaAs（001）表面的扫描隧道显微镜观察
Ga-rich GaAs(001) surfaces observed during high-temperature annealing by scanning tunneling microscopy
摘要：
利用扫描隧道显微镜（STM）成功地观察到了高温退火过程中GaAs（001）表面的富Ga结构。在550 ℃的衬底温度下，反射高能衍射图案和反射各向异性光谱确认了（4 × 2）Ga稳定的表面。STM图像清楚地显示了扫描时表面重建的变化。据推测，脱离和附着的Ga吸附原子可能是这些表面动力学的原因。对于这些条件，确定zeta（4x4）、zeta 2（4x4）和zeta（4x6）重构共存于表面上。zeta 2（4x4）重构包含Ga四聚体簇，并且在更富Ga的条件下，zeta 2（4x6）表面具有Ga八聚体簇。
英文摘要：
Ga-rich GaAs (001) surfaces are successfully observed during high-temperature annealing by scanning tunneling microscopy (STM). With a substrate temperature of 550 C, reflection high-energy diffraction patterns and reflectance anisotropy spectra confirm a (4x2) Ga-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that detaching and attaching of Ga adatoms may be the cause of these surface dynamics. For these conditions it is determined that zeta(4x4), zeta2(4x4) and zeta(4x6) reconstructions co-exist on the surface. The zeta2(4x4) reconstruction contains a Ga tetramer cluster and in more Ga-rich conditions, the zeta2(4x6) surface has a Ga octamer cluster.
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