晶态尖晶石GaON薄膜的直接生长：一种宽禁带混合阴离子半导体
Direct growth of crystalline spinel GaON films: A wide-bandgap mixed-anion semiconductor
AI总结：
该研究通过氮等离子体辅助脉冲激光沉积直接生长出晶态尖晶石γ-GaON薄膜，明确其室温带边跃迁约4.3 eV，为混合阴离子宽禁带半导体研究及异质结开发提供了基础。
摘要：
混合阴离子半导体为超越传统多阳离子合金的带隙工程提供了机遇，但竞争相和无序性使其合成及电子性质的表征变得复杂。氧氮化镓（GaON）可连接技术上重要的GaN和Ga₂O₃体系，然而明确其晶体结构、组成与带隙之间的关系仍具挑战性。本文报道通过氮等离子体辅助脉冲激光沉积直接生长晶态尖晶石γ-GaON薄膜；改变氮和氧的供给可得到单斜相β-Ga₂O₃、主要为无序的薄膜以及晶态尖晶石GaON。互补的衍射、原子分辨显微镜和元素分析证实了尖晶石结构及氮的掺入。温度依赖的光电流光谱显示晶态γ-GaON的响应出现明显红移，支持其室温下带边跃迁约为4.3 eV的归属。这些结果为研究混合阴离子宽禁带半导体物理及开发异质结提供了机遇。
英文摘要：
Mixed-anion semiconductors offer opportunities for bandgap engineering beyond conventional multication alloys, but competing phases and disorder complicate their synthesis and the identification of their electronic properties. Gallium oxynitride (GaON) could connect the technologically important GaN and Ga2O3 systems, yet establishing a clear relation between its crystal structure, composition and bandgap remains challenging. Here we report the direct growth of crystalline spinel gamma-GaON films by nitrogen-plasma-assisted pulsed-laser deposition. Varying the nitrogen and oxygen supply yields monoclinic beta-Ga2O3, predominantly disordered films and crystalline spinel GaON. Complementary diffraction, atomic-resolution microscopy and elemental analysis establish the spinel structure and nitrogen incorporation. Temperature-dependent photocurrent spectroscopy reveals a clear redshift of the crystalline gamma-GaON response, supporting assignment of a band-edge transition near 4.3 eV at room temperature. These results open opportunities to investigate mixed-anion wide-bandgap semiconductor physics and develop heterostructures.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
