发表机构
Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences; Hangzhou International Innovation Institute, Beihang University; Institut Jean Lamour, Université de Lorraine, CNRS（中国科学院半导体研究所; 中国科学院大学; 北京航空航天大学杭州创新研究院; 洛林大学让·拉穆尔研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
该研究在垂直成分梯度MnxCoAl/Pt异质结构中，通过调控电流脉冲实现无场自旋轨道矩翻转，在同一器件中完成多种布尔运算，拓展了Mn-Co-Al赫斯勒异质结构的应用场景。
AI 中文摘要
自旋电子学的逻辑-存储一体化通过在单个物理单元内集成非易失性存储与逻辑功能，为降低数据传输能耗、加速计算提供了可行路径。本研究在垂直成分梯度MnxCoAl/Pt异质结构中探究无场自旋轨道矩（SOT）翻转与可重构自旋逻辑。与均匀成分的Mn1.8CoAl/Pt、Mn2.5CoAl/Pt对照器件不同，Mn1.8-2.5CoAl梯度器件在零外磁场下表现出确定性SOT翻转。与Dzyaloshinskii-Moriya相互作用（DMI）相关的测量显示存在有限的特征有效场尺度，表明手性磁化反转过程参与其中。同时，垂直成分梯度引入的磁不均匀性可调控畴形核与畴壁传播，上述综合效应与观测到的无场翻转行为一致。该成分梯度器件在零磁场下还表现出累积式多态翻转，具备稳定的中间霍尔电阻态，而均匀成分对照器件未呈现出可比的稳定多态行为。通过调控电流脉冲的幅度、极性与序列，该器件可在二进制与多电平翻转模式间切换，在同一霍尔条器件中无需任何外磁场即可实验实现AND、OR、NAND、NOR布尔运算。这些结果通过垂直成分工程将Mn-Co-Al赫斯勒异质结构从场辅助SOT翻转拓展至无场磁化控制、多态操作及可重构自旋逻辑领域。
英文摘要
Spintronic logic-in-memory provides a route to reducing data-transfer energy consumption and accelerating computation by integrating nonvolatile storage and logic functions within a single physical unit. Here, we investigate field-free spin-orbit-torque (SOT) switching and reconfigurable spin logic in a vertically composition-graded MnxCoAl/Pt heterostructure. In contrast to the uniform-composition Mn1.8CoAl/Pt and Mn2.5CoAl/Pt control devices, the Mn1.8-2.5CoAl gradient device exhibits deterministic SOT switching under zero external magnetic field. Dzyaloshinskii-Moriya interaction (DMI)-related measurements reveal a finite characteristic effective-field scale, indicating the involvement of chiral magnetization-reversal processes. Meanwhile, the vertical composition gradient introduces magnetic inhomogeneity that can modify domain nucleation and propagation, and the combined effects are consistent with the observed field-free switching behavior. The composition-gradient device further exhibits accumulative multistate switching with stable intermediate Hall-resistance states under zero magnetic field, whereas the uniform-composition controls do not show comparable stable multistate behavior. By tailoring the amplitude, polarity, and sequence of current pulses, the device can be tuned between binary and multilevel switching modes, enabling the experimental realization of AND, OR, NAND, and NOR Boolean operations within the same Hall-bar device without any external magnetic field. These results extend Mn-Co-Al Heusler heterostructures from field-assisted SOT switching toward field-free magnetization control, multistate operation, and reconfigurable spin logic through vertical composition engineering.
