发表机构
Universität Würzburg; Würzburg-Dresden Cluster of Excellence ctd.qmat, Universität Würzburg; Universität Münster; University of Bologna; Institut für Theoretische Physik und Astrophysik, Universität Würzburg（维尔茨堡大学; 维尔茨堡大学维尔茨堡-德累斯顿卓越集群ctd.qmat; 明斯特大学; 博洛尼亚大学; 维尔茨堡大学理论物理与天体物理研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究提出利用扫描隧道显微镜的实空间方法，通过波函数干涉诱导的电荷序探测$L_z$轨道角动量，在两种二维量子材料中验证了该方法可关联拓扑相，为量子材料研究提供新手段。
AI 中文摘要
轨道角动量（OAM）表征是理解谷霍尔体系、Rashba体系等量子材料的核心，且通过与贝里曲率的关联，为能带拓扑提供关键见解。然而，传统的光发射二向色性OAM探测易受干涉伪影影响，且大多局限于占据态。本文展示了一种利用扫描隧道显微镜在三角原子单层中绘制$L_z$ OAM特征的实空间方法。与光发射不同，该方法利用源于$L_z$轨道相位和相邻原子相关的布洛赫相位的干涉效应，这将局域态密度（LDOS）最大值转移到原子间不同的Wyckoff位置，将$L_z$信息编码为特征实空间LDOS图案。我们在具有不同$L_z$序列的二维量子材料（即Tl/Si(111)和In/SiC(0001)单层）中例证了该方法，在两种体系中识别出与不同拓扑相相关的$L_z$依赖型LDOS积累。我们的结果确立了$L_z$依赖型电荷局域化作为三角晶格中能量孤立态的原子障碍的替代指标，包括过渡金属二硫族化合物。
英文摘要
Orbital angular momentum (OAM) characterization is central to understanding quantum materials such as valley Hall and Rashba systems and, through its connection to Berry curvature, provides key insight into band topology. Conventional OAM detection via photoemission dichroism, however, is susceptible to interference artifacts and is largely restricted to occupied states. Here, we demonstrate a real-space approach to map the $L_z$ OAM character using scanning tunneling microscopy in triangular atomic monolayers. Unlike photoemission, this method exploits interference effects arising from the $L_z$ orbital phase and the Bloch phase associated with neighboring atoms. This shifts the local density of states (LDOS) maxima to distinct Wyckoff positions between atoms, encoding $L_z$ information into characteristic real-space LDOS patterns. We exemplify this approach in 2D quantum materials with contrasting $L_z$ sequences, namely Tl/Si(111) and In/SiC(0001) monolayers, identifying $L_z$-dependent LDOS accumulation associated with distinct topological phases in both systems. Our results establish $L_z$-dependent charge localization as a proxy to atomic obstruction for energetically isolated states in triangular lattices, including transition-metal dichalcogenides.
