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通过调控斯格明子的尺寸与形状增强拓扑霍尔效应

Enhancement of the Topological Hall Effect through Engineering the Skyrmion Size and Shape

Kazuma Murata, Ryunosuke Terasawa, Hiroaki Ishizuka

arXiv 2610.11244首次发表:更新:

发表机构

Institute of Science Tokyo(东京科学大学)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

针对斯格明子拓扑霍尔效应幅值小的问题,通过基于角动量本征态的形式主义,理论研究弱耦合极限下稀疏分布斯格明子的尺寸与形状对拓扑霍尔效应的影响,发现清洁材料中该效应可通过调控斯格明子尺寸、形状及畴壁宽度实现增强与调控。

AI 中文摘要

斯格明子的拓扑霍尔效应是探测磁结构的一种很有前景的电学手段,但其幅值较小,限制了相关应用。本工作中,我们在弱耦合极限下,从理论上研究了稀疏分布的斯格明子诱导的拓扑霍尔效应,重点关注斯格明子的尺寸与形状如何影响该霍尔效应。为此,我们采用了基于角动量本征态的形式主义,该方法能在合理的计算时间内实现系统分析。我们发现,在电子平均自由程与斯格明子尺寸相当或更大的清洁材料中,该霍尔效应显著依赖于斯格明子的尺寸与形状。特别地,当$k_F\lambda\sim 1$时,该霍尔效应最大,且其幅值可通过斯格明子的畴壁宽度进行调控。这些发现为研究斯格明子的形状与尺寸如何影响输运性质提供了基础,并证明通过调控这些性质可实现拓扑霍尔效应的可控性。

英文摘要

The topological Hall effect of skyrmions is a promising electrical probe of magnetic textures, but its small magnitude limits applications. In this work, we theoretically investigate the topological Hall effect induced by sparsely distributed skyrmions in the weak-coupling limit, focusing on how the size and shape of the skyrmion affect the Hall effect. To this end, we used a formalism based on angular-momentum eigenstates, which enables systematic analysis within reasonable computation time. We found that, in clean materials where the electron mean-free path is comparable to or larger than the skyrmion size, the Hall effect depends considerably on the size and shape of the skyrmion. In particular, the Hall effect is largest when $k_Fλ\sim 1$, and its magnitude can be tuned by the domain-wall width of skyrmions. These findings provide a basis for investigating how the shape and size of skyrmions affect transport properties and demonstrate that the topological Hall effect is controllable by engineering these properties.

Comments6 pages, 3 figures

论文原文

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