发表机构
DEVCOM Army Research Laboratory; Department of Electrical Engineering, University of South Florida（DEVCOM陆军研究实验室; 南佛罗里达大学电气工程系）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文通过低温偏振依赖光致发光测量，明确了4H和6H-SiC中钒缺陷不同位点的偏振特性，完善了其偏振选择定则，为基于钒缺陷的量子网络应用提供了关键实验依据。
AI 中文摘要
具有光学可寻址自旋态的点缺陷是量子网络的关键构建模块，但很少有固态发射器能同时具备自旋-光子界面和低损耗电信波段发射的特性。碳化硅（SiC）中的钒（V⁴⁺）缺陷满足这一要求，在4H和6H-SiC多型体中均能在电信O波段发射零声子线（ZPL），同时保留可寻址的电子和核自旋系统[1,2]。尽管这些缺陷的轨道和自旋结构已被详细表征，但偏振选择定则尚未通过实验完全绘制。本文在低温下对4H和6H-SiC中的钒ZPL进行了偏振依赖光致发光（PL）测量，采用两种散射几何结构：边缘型（发射波矢垂直于晶体c轴）和面朝上型（发射波矢平行于晶体c轴）。四个α位中的两个（α2和α3）以及6H-SiC的γ位的发射平行于c轴偏振（σ偏振），而α1和α4的发射垂直于c轴偏振（π偏振）。此外，我们还报告了β位的初步低信号测量结果。
英文摘要
Point defects with optically addressable spin states are a key building block for quantum networks, but few solid-state emitters combine a spin-photon interface with emission in the low-loss telecommunications band. Vanadium (V4+) defects in silicon carbide (SiC) meet this requirement, emitting zero-phonon lines (ZPLs) throughout the telecom O-band in both the 4H- and 6H-SiC polytypes while retaining an addressable electron and nuclear spin system [1,2]. Although the orbital and spin structure of these defects has been characterized in detail, the polarization selection rules have not been fully mapped experimentally. Here we present polarization-dependent photoluminescence (PL) measurements of vanadium ZPLs in 4H- and 6H-SiC at cryogenic temperature, of two scattering geometries: edge and face-on (emission wavevector perpendicular and parallel to the crystal c-axis, respectively). Emission from two of the four α sites, (α2 and α3) and the 6H-SiC γ sites, are polarized parallel to the c-axis (σ-polarized), whereas emission from α1 and α4 are polarized perpendicular to the c-axis (π-polarized). Additionally, we report preliminary, lower signal measurements of the \b{eta} sites.
Comments7 pages, 4 figures, Submitted to Material Science Forum
