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氧掺杂ZnO纳米棒中的激子开关与可调激子-声子耦合

Exciton switching and tunable exciton-phonon coupling in Oxygen doped ZnO nanorods

Aiswarya Rath, Kalyan Ghosh, Pratap K Sahoo

arXiv 2610.10353首次发表:更新:

发表机构

National Institute of Science Education and Research (NISER); Homi Bhabha National Institute(国家科学教育与研究所(NISER); 霍米·巴巴国家研究所)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

通过氧离子辐照调控ZnO纳米棒缺陷,实现可逆激子开关及激子-声子耦合的调谐,为缺陷可编程纳米光子器件提供新途径。

AI 中文摘要

ZnO纳米棒中的自离子掺杂为动态控制激子态和光-物质相互作用提供了一条有效途径。本文中,对垂直排列的六方ZnO纳米棒进行了250 keV氧离子辐照,以建立辐照诱导缺陷与激子及光学响应之间的直接联系。随着离子注量的增加,380 nm处的近带边发射被逐步猝灭,导致激子完全处于OFF(关闭)状态,而热退火则恢复发射,产生可逆的激子OFF或ON(开启)响应。这种开关行为源于缺陷介导的激子态修饰及其热恢复。缺陷带发射(400至750 nm)表现出准周期性的回音壁模式样共振,随着辐照改变纳米棒几何形状和光学限制,这些共振被逐步抑制。低温光致发光分辨出D0X、FX 1LO和FX 2LO跃迁,其温度演化遵循玻色-爱因斯坦模型。激子-声子耦合强度的非单调变化揭示了辐照诱导缺陷、晶格畸变和激子局域化在决定激子-声子耦合中的竞争作用。这些结果确立了氧离子辐照作为同时调控激子开关、激子-声子相互作用和光学共振的手段,为缺陷可编程的ZnO纳米光子与光电子器件提供了途径。

英文摘要

Self ion doping in ZnO nanorods offers a powerful route to dynamically control excitonic states and light matter interactions. Here, vertically aligned hexagonal ZnO nanorods were irradiated with 250 keV oxygen ions to establish a direct link between irradiation induced defects and excitonic and optical responses. Increasing ion fluence progressively quenches the near band edge emission at 380 nm, leading to a complete exciton OFF state, while thermal annealing restores the emission, yielding a reversible exciton OFF or ON response. This switching originates from defect mediated modification and thermal recovery of excitonic states. The defect band emission, between 400 to 750 nm, exhibits quasi periodic whispering gallery mode like resonances that are progressively suppressed as irradiation alters nanorod geometry and optical confinement. Low-temperature photoluminescence resolves D0X, FX 1LO, and FX 2LO transitions, whose temperature evolution follows the Bose Einstein model. The non-monotonic variation of excition phonon coupling strength reveals a competition among irradiation induced defects, lattice distortion, and exciton localization in determining exciton phonon coupling. These results establish Oxygen ion irradiation as a means to simultaneously engineer excitonic switching, exciton phonon interactions, and optical resonances, providing a pathway toward defect programmable ZnO nanophotonic and optoelectronic devices.

Comments9 pages, 9 figures

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