发表机构
Leiden University; Istituto Nanoscienze-CNR; CNR-SPIN（莱顿大学; 意大利国家研究委员会纳米科学研究所; 意大利国家研究委员会超导、创新材料与器件研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
通过全悬浮超导纳米线排除泄漏通道，发现栅极电压可指数级增强相滑移逃逸率（跨六个数量级），且极性反转时不对称，揭示静电与相滑移的复杂作用。
AI 中文摘要
栅极电压可以抑制超导纳米线的临界电流，已有多种机制被提出用于描述这些观测结果。关键困难在于，这些机制（包括泄漏驱动和场驱动机制）在标准实验中无法区分。本文通过研究一根与栅极由真空隔开、完全悬浮的非晶MoGe超导纳米线，消除了所有泄漏驱动通道，从而解决了这一问题。我们测量了相滑移逃逸率$\Gamma$，发现栅极诱导的$\Gamma$增强幅度很大，在六个数量级上呈指数增长。对各种逃逸率模型的拟合显示，与简单相滑移模型存在显著偏差，暗示静电场与相滑移中心之间存在复杂相互作用。令人惊讶的是，$\Gamma$在栅极电压极性反转时并不保持不变。我们的工作建立了栅极电压与$\Gamma$之间明确且非平凡的联系，为未来研究该效应的起源提供了指导。
英文摘要
A gate voltage can suppress the critical current of a superconducting nanowire, and various scenarios have been proposed to describe these observations. The key difficulty is that these scenarios, including both leakage-driven and field-driven mechanisms, are impossible to disentangle in standard experiments. Here, we resolve this issue by studying a fully suspended superconducting nanowire of amorphous MoGe, separated from the gate by vacuum, eliminating all leakage-driven channels. We measure the phase slip escape rate $Γ$ and find a large gate-induced enhancement of $Γ$, exponential over six orders of magnitude. Fitting various escape-rate models reveals a strong deviation from simple phase slip models, hinting at a complex interaction between the electrostatic field and the phase slip centers. Surprisingly, $Γ$ is not invariant under reversal of the gate-voltage polarity. Our work establishes a clear and nontrivial connection between gate voltage and $Γ$, guiding future research into the origins of the effect.
Comments12 pages, 6 figures
