发表机构
Dibrugarh University（迪布鲁加尔大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过改变源到衬底距离（15-24厘米）热蒸发沉积CdTe、CdSe和Sb$_2$S$_3$薄膜，发现SSD可调控其光学带隙和厚度，其中CdTe和CdSe因低带隙和高吸收系数适合作为薄膜太阳能电池吸收层。
AI 中文摘要
本研究采用热蒸发技术，通过改变源到衬底距离（SSD）从15厘米到24厘米（15、18、21和24厘米），沉积了碲化镉（CdTe）、硒化镉（CdSe）和三硫化二锑（Sb$_2$S$_3$）薄膜。系统研究了SSD对所沉积薄膜的结构、成分、光学和电学性质的影响。X射线衍射（XRD）分析显示CdTe和CdSe薄膜具有多晶性质，而Sb$_2$S$_3$薄膜呈现非晶态。能量色散X射线光谱（EDX）确认了所沉积薄膜中组成元素的存在。光学分析显示，随着SSD增加，光学带隙出现微小变化，而通过包络法确定的薄膜厚度随SSD增加而减小。CdTe和CdSe的光学带隙能量低于2 eV，而Sb$_2$S$_3$表现出相对较高的带隙。CdTe和CdSe薄膜相对较低的带隙能量和高吸收系数使其成为薄膜太阳能电池（TFSCs）中吸收层应用的有前景候选材料。薄膜表现出相对较低的光学透过率，这对于吸收层中高效光吸收是理想的。电学表征确认了所有沉积薄膜的半导体性质。总体而言，结果表明通过改变SSD可以有效调控CdTe、CdSe和Sb$_2$S$_3$薄膜的光学和电学性质。研究结果指出，除了已确立的CdTe吸收层外，CdSe薄膜在TFSCs中作为吸收材料也显示出应用潜力。
英文摘要
In this work, cadmium telluride (CdTe), cadmium selenide (CdSe), and antimony sulfide (Sb\(_2\)S\(_3\)) thin films were deposited using the thermal evaporation technique by varying the source-to-substrate distance (SSD) from 15 to 24 cm (15, 18, 21, and 24 cm). The influence of the SSD on the structural, compositional, optical and electrical properties of the deposited films was systematically investigated. XRD analysis revealed the polycrystalline nature of the CdTe and CdSe thin films, whereas the Sb$_2$S$_3$ thin films exhibited an amorphous nature. EDX spectroscopy confirmed the presence of the constituent elements in the deposited films. Optical analysis revealed a marginal variation in the optical band gap with increasing SSD, while the film thickness, determined using the envelope method, decreased with increasing SSD. The optical band gap energies of CdTe and CdSe were found to be below 2 eV, whereas Sb$_2$S$_3$ exhibited a relatively higher band gap. The relatively low band gap energies and high absorption coefficients of the CdTe and CdSe films make them promising candidates for absorber layer applications in thin film solar cells (TFSCs). The films exhibited relatively low optical transmittance, which is desirable for efficient light absorption in absorber layers. Electrical characterization confirmed the semiconducting nature of all the deposited thin films. Overall, the results demonstrate that the optical and electrical properties of CdTe, CdSe and Sb$_2$S$_3$ thin films can be effectively modified by varying the SSD. The findings indicate that, in addition to the well established CdTe absorber, CdSe thin films show potential for application as absorber materials in TFSCs.
Comments12 Pages, 9 Figures
