发表机构
Pritzker School of Molecular Engineering, University of Chicago; Materials Science Division, Argonne National Laboratory（芝加哥大学普里茨克分子工程学院; 阿贡国家实验室材料科学部）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文提出一种直接写入化学气相沉积平台，利用10微米喷嘴在超高真空下实现无掩模局部生长，通过耦合Knudsen发射与表面扩散的传输框架提取有效扩散长度$L_d$，并验证其作为预测特征分辨率的定量参数。
AI 中文摘要
直接写入图案化，通过喷嘴进行化学气相沉积，能够利用电子工业标准的高纯度前驱体实现局部薄膜生长。然而，实现亚100微米的特征控制一直受到喷嘴设计和前驱体表面扩散未量化的限制。在此，我们报告了一种直接写入化学气相沉积平台，该平台采用直径为10微米的玻璃微喷嘴，安装在超高真空下加热基底上方的扫描台上。使用这种方法，我们展示了在氮化钛涂覆的硅上连续单次写入500纳米厚的金属铝线，线宽为30微米。这一能力使得在单个基底上，在系统变化的沉积条件下，无需掩模即可进行局部生长。为了分析由此产生的沉积物轮廓，我们引入了一个传输框架，将微喷嘴的Knudsen气体发射与表面扩散耦合，以提取有效前驱体扩散长度$L_d$。$L_d$捕捉了前驱体表面迁移率、停留时间、基底温度（165°C至205°C）、生长持续时间和喷嘴高度的综合影响，在高温下从17.4微米收缩至3.2微米。这些结果确立了$L_d$作为评估横向受限化学气相生长和预测特征分辨率极限的定量参数。该方法为测量和量化局部薄膜合成中的前驱体表面传输提供了一种实用方法。
英文摘要
Direct-write pattering, using chemical vapor deposition through a nozzle, enables localized film growth using high-purity precursors standard to the electronics industry. Yet, achieving sub 100 $μ\mathrm{m}$ feature control has been limited by nozzle design and unquantified precursor surface diffusion. Here, we report a direct-write chemical vapor deposition platform that employs a 10 $μ\mathrm{m}$ tip diameter glass micro-nozzle mounted on a scanning stage above a heated substrate in ultra-high vacuum. Using this approach, we demonstrate the continuous single-pass writing of 500 $\mathrm{nm}$ thick metallic aluminum lines with a 30 $μ\mathrm{m}$ linewidth on titanium nitride-coated silicon. This capability enables maskless, localized growth under systematically varied deposition conditions on a single substrate. To analyze the resulting deposit profiles, we introduce a transport framework coupling Knudsen gas emission from the micro-nozzle with surface diffusion to extract the effective precursor diffusion length, $L_d$. $L_d$ captures the combined impact of precursor surface mobility, residence time, substrate temperature ($165^{\circ}\mathrm{C}$ to $205^{\circ}\mathrm{C}$), growth duration, and nozzle height, contracting from 17.4 $μ\mathrm{m}$ down to 3.2 $μ\mathrm{m}$ at elevated temperatures. These results establish $L_d$ as a quantitative parameter for evaluating laterally confined chemical vapor growth and predicting feature resolution limits. This approach provides a practical methodology to measure and quantify precursor surface transport in localized film synthesis.
Comments18 pages, 9 figures
