发表机构
School of Chemistry and Chemical Engineering, Harbin Institute of Technology（哈尔滨工业大学化学化工学院）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究以层状GeSe为例，发现其力学响应依赖方向、尺寸和加载条件，单一测试不足以判定塑性，提出需多方向、多尺度、多模式的系统评估框架，并强调建立更严格统一标准的重要性。
AI 中文摘要
当塑性无机半导体的力学响应依赖于晶体取向、样品尺寸和加载条件时，其识别变得具有挑战性。以层状GeSe为模型体系，我们通过宏观压缩、弯曲、常规微柱压缩和偏心微柱压缩来考察其变形行为。在垂直于层方向的宏观压缩下，GeSe可承受约23%的应变而不发生断裂，而沿c轴扶手椅方向的弯曲则产生脆性解理断裂。常规微柱压缩导致脆性碎裂，而偏心加载引入剪切分量，激活了显著的层间滑动并容纳变形。这些截然不同的响应反映了键合拓扑、层间范德华相互作用、缺陷密度、应力约束和应变路径对滑动与断裂竞争之间的耦合影响。结果凸显了从单一方向、尺度或测试来识别塑性的局限性，并支持一种结合多个方向、长度尺度、加载模式和表征技术的系统评估框架。需要更严格且统一的标准来指导柔性电子器件及集成于曲面上的设备的可靠材料选择。
英文摘要
The identification of plastic inorganic semiconductors becomes challenging when their mechanical responses depend on crystallographic orientation, sample size, and loading conditions. Using layered GeSe as a model system, we examine its deformation behavior through macroscopic compression, bending, conventional micropillar compression, and eccentric micropillar compression. Under macroscopic compression perpendicular to the layers, GeSe sustains approximately 23% strain without fracture, whereas bending along the c-axis armchair direction produces brittle cleavage fracture. Conventional micropillar compression results in brittle fragmentation, while eccentric loading introduces a shear component that activates pronounced interlayer sliding and accommodates deformation. These contrasting responses reflect the coupled effects of bonding topology, interlayer van der Waals interactions, defect density, stress constraints, and strain path on the competition between sliding and fracture. The results highlight the limitations of identifying plasticity from a single direction, scale, or test and support a systematic evaluation framework combining multiple directions, length scales, loading modes, and characterization techniques. More rigorous and unified criteria are needed to guide reliable materials selection for flexible electronics and devices integrated on curved surfaces.
