发表机构
Istituto Nazionale di Fisica Nucleare; Università degli Studi del Piemonte Orientale; Fondazione Bruno Kessler; TIFPA-INFN; Università degli Studi di Torino; Università degli Studi di Perugia（意大利国家核物理研究所; 皮埃蒙特东方大学; 布鲁诺·凯斯勒基金会; 意大利国家核物理研究所托斯卡纳粒子物理与天体物理研究所; 都灵大学; 佩鲁贾大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文通过开发并验证DCRSD_SurfaceSimulator模拟器，比较了DC-RSD探测器三种电极间结构，发现电阻条在位置分辨率上比沟槽提升约25%，并归因于电荷共享梯度的差异。
AI 中文摘要
C耦合电阻硅探测器（RSD）通过电阻性n$^+$表面层在电极间共享电荷，电极间结构的选择——沟槽、电阻条或无结构——直接决定了可实现的位置分辨率及其均匀性。本文探讨了哪种结构最能优化空间分辨率的问题。为了定量回答这一问题，开发了DCRSD_SurfaceSimulator，这是一个基于ROOT的工具，将电阻表面建模为二维基尔霍夫电阻网络，并求解电荷共享作为击中位置、表面电阻率和电极间结构的函数。该模拟器已针对FBK DC-RSD传感器的测试束数据进行了验证，这些传感器的像素间距为300、500和1000~$\mu$m，正确再现了位置分辨率、其空间均匀性和信号共享模板。使用经过验证的模拟器，比较了沟槽、电阻条和无限制结构在位置分辨率及其空间均匀性、电极间电阻和对外部像素的信号泄漏方面的表现。发现电阻条在分辨率上优于沟槽约25%，适用于所有测试的条电阻（500--2000~$\Omega$）和输入阻抗（0--100~$\Omega$），在表面电阻率为1000~$\Omega/\square$时，并将这一差异的根源追溯到电荷共享分数的空间梯度：沟槽产生的梯度明显较弱且不均匀，尤其是在远离像素中心的地方，而电阻条或裸电阻表面则不然。
英文摘要
DC-coupled Resistive Silicon Detectors (RSD) share charge among electrodes through a resistive n$^+$ surface layer, and the choice of inter-electrode structure --- a trench, a resistive strip, or no structure at all --- directly determines the achievable position resolution and its uniformity. This paper addresses the question of which structure best optimises the spatial resolution. To answer it quantitatively, DCRSD_SurfaceSimulator was developed, a ROOT-based tool that models the resistive surface as a two-dimensional Kirchhoff resistive network and solves for charge sharing as a function of hit position, surface resistivity, and inter-electrode structure. The simulator is validated against test-beam data from FBK DC-RSD sensors with 300, 500, and 1000~$μ$m pixel pitch, reproducing the position resolution, its spatial uniformity, and the signal-sharing templates correctly. Using the validated simulator, trenches, resistive strips, and no containment are then compared on position resolution and its spatial uniformity, inter-electrode resistance, and signal leakage to outer pixels. Resistive strips are found to outperform trenches in resolution by approximately 25\% for all tested strip resistances (500--2000~$Ω$) and input impedances (0--100~$Ω$), at a surface resistivity of 1000~$Ω/\square$, and trace the origin of this difference to the spatial gradient of the charge-sharing fraction: trenches produce a markedly weaker and less uniform gradient, particularly away from the pixel centre, than either a resistive strip or a bare resistive surface.
