发表机构
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Physical Science Research Center, and School of Physics, Nanjing University; Institute of Atom Manufacturing, Nanjing University; Jiangsu Provincial Key Laboratory of Atomic Level Manufacturing, Nanjing Institute of Atomic Scale Manufacturing; School of Physics and Electronic Information, Jiangsu Second Normal University（南京大学固体微结构物理国家重点实验室、先进微结构协同创新中心、江苏省物理科学研究中心和物理学院; 南京大学原子制造研究所; 江苏省原子级制造重点实验室、南京原子尺度制造研究所; 江苏第二师范学院物理与电子信息学院）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究在双栅极BiSbTeSe2器件中实现了高度栅极可调的大二阶和三阶非线性霍尔效应，二阶效应效率优于先前拓扑绝缘体系统且室温稳定，为非线性霍尔器件提供了实验平台。
AI 中文摘要
非线性霍尔效应（NLHE）为下一代电子器件应用带来了重要前景，探索和工程化强且高度可调的NLHE至关重要。在本工作中，我们报道了双栅极BiSbTeSe2器件中的大二阶和三阶NLHE。二阶和三阶NLHE均具有高度栅极可调性。二阶NLHE表现出比先前拓扑绝缘体系统中更高的产生效率，并且可以在室温下稳定观察到。同时，三阶NLHE的产生效率与先前报道的值相当。标度分析表明，二阶NLHE与斜散射和与贝里曲率偶极子或侧跳兼容的项的贡献一致，而三阶NLHE与贝里连接极化率张量和更高阶斜散射的贡献一致。我们的工作为基于NLHE的器件开发建立了一个有前景的实验平台。
英文摘要
The nonlinear Hall effect (NLHE) holds significant promise for next-generation electronic device applications, and it is essential to explore and engineer a strong and highly tunable NLHE. In this work, we report large second-order and third-order NLHEs in dual-gated BiSbTeSe2 devices. Both the second-order and third-order NLHE are highly gate-tunable. The second-order NLHE exhibits a higher generation efficiency than those reported in previous topological insulator systems, and it can be stably observed up to room temperature. Meanwhile, the generation efficiency of the third-order NLHE is comparable to previously reported values. The scaling analysis indicates that the second-order NLHE is consistent with contributions from skew scattering and a term compatible with either the Berry curvature dipole or side jump, whereas the third-order NLHE is consistent with contributions from the Berry connection polarizability tensor and higher-order skew scattering. Our work establishes a promising experimental platform for the development of NLHE-based devices.
Journal refPhys. Rev. Materials (2026)
