发表机构
Iowa State University; Air Force Research Laboratory（爱荷华州立大学; 空军研究实验室）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究报道了利用TiO2/Al2O3场板实现千伏级垂直(011) β-Ga2O3肖特基二极管，通过有效边缘终端提升击穿电压至4.16 kV，并在25-150°C范围内保持优异正向导通和约10^9整流比，展示了其在高温功率开关中的潜力。
AI 中文摘要
我们报道了利用高介电常数介质TiO2/Al2O3场板实现千伏级垂直(011) β-Ga2O3肖特基二极管，用于高电压和高温度应用。我们对直径从100 μm到300 μm变化的Pt/(011) β-Ga2O3肖特基势垒二极管（SBDs）进行了系统研究，包括有无场板的两种情况，结果显示无论二极管面积如何，反向阻断性能均表现出极好的一致性。由于有效的边缘终端，带场板的SBDs实现了更高的击穿电压（3.90 - 4.16 kV），而不带场板的二极管击穿电压为（3.06 - 3.16 kV）。此外，我们探索了带场板(011) β-Ga2O3二极管的高温性能，发现在整个温度范围（25 - 150 °C）内，其正向导通性能优异，整流比高达约10^9。在反向偏压下，带场板的二极管也表现出千伏级的击穿电压，并且在高达150 °C的测试温度下，漏电流没有明显增加。击穿电压对面积依赖性低、正向输运性能优异，以及在高电压和高温下极小的反向漏电流，共同展示了(011) β-Ga2O3 SBDs在高温功率开关中的巨大潜力。因此，我们的工作展示了利用具有低背景掺杂、减少致命位错效应和有效场管理的(011) β-Ga2O3外延层来提升垂直β-Ga2O3 SBDs性能的策略，适用于高电压和高温度应用。
英文摘要
We report kilovolt-class vertical (011) \b{eta}-Ga2O3 Schottky diodes utilizing high-permittivity dielectric TiO2/Al2O3 field-plate for high voltage and high temperature applications. A systematic study was performed with Pt/(011) \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) with varied diameters from 100 μm to 300 μm, for both with and without field-plate, that revealed excellent consistency of reverse blocking performance regardless of diode area. The field-plate SBDs achieved superior breakdown voltages (3.90 - 4.16 kV) compared to the diodes without field-plate (3.06 - 3.16 kV) owing to effective edge termination. Furthermore, we explored high-temperature performance of the field-plate (011) \b{eta}-Ga2O3 diodes that revealed excellent forward conduction properties and high rectification ratio (~10^9) throughout the temperature range (25 - 150 C). At reverse bias, the field-plate diodes also exhibited kV-range breakdown voltage with no evident increase in leakage current up to the explored elevated temperature of 150 C. The low area-dependence of breakdown voltage, excellent forward transport properties, and minimal reverse leakage at both high-voltage and elevated temperature demonstrate the exciting potential of (011) \b{eta}-Ga2O3 SBDs in high-temperature power switches. Thus, our work demonstrates the strategy of advancing the performance of vertical \b{eta}-Ga2O3 SBDs by utilizing the advantageous (011) \b{eta}-Ga2O3 epilayers with low background doping, reduced killer dislocation effects, and effective field management for high-voltage and high-temperature applications.
